All MOSFET. SPD04N60S5 Datasheet

 

SPD04N60S5 MOSFET. Datasheet pdf. Equivalent

Type Designator: SPD04N60S5

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V

Maximum Drain Current |Id|: 4.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 17.6 nC

Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm

Package: DPAK, TO252

SPD04N60S5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPD04N60S5 Datasheet (PDF)

1.1. spd04n60s5.pdf Size:244K _inchange_semiconductor

SPD04N60S5 SPD04N60S5

isc N-Channel MOSFET Transistor SPD04N60S5,ISPD04N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600

2.1. spd04n60c3 spu04n60c3.pdf Size:744K _infineon

SPD04N60S5 SPD04N60S5

 VDS Tjmax Ω • • G G • • • • G G

2.2. spd04n60c3.pdf Size:245K _inchange_semiconductor

SPD04N60S5 SPD04N60S5

isc N-Channel MOSFET Transistor SPD04N60C3,ISPD04N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE

Datasheet: SPD02N60C3 , SPD02N60S5 , SPD02N80C3 , SPD03N50C3 , SPD03N60C3 , SPD03N60S5 , SPD04N50C3 , SPD04N60C3 , APT50M38JLL , SPD04N80C3 , SPD04P10PG , SPD04P10PLG , SPD06N60C3 , SPD06N80C3 , SPD07N20G , SPD07N60C3 , SPD07N60S5 .

 

 
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