All MOSFET. SPD04N60S5 Datasheet

 

SPD04N60S5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPD04N60S5
   Marking Code: 04N60S5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17.6 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO252

 SPD04N60S5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPD04N60S5 Datasheet (PDF)

 ..1. Size:268K  1
 spd04n60s5 spu04n60s5.pdf

SPD04N60S5 SPD04N60S5

SPU04N60S5SPD04N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.95 New revolutionary high voltage technologyID 4.5 A Ultra low gate chargeP-TO252. P-TO251. Periodic avalanche rated Extreme dv/dt rated23 Ultra low effective capacitances3121 Improved transconductanceType Package Ordering Code Marking04N60S5SPU04N60S5 P-T

 ..2. Size:244K  inchange semiconductor
 spd04n60s5.pdf

SPD04N60S5 SPD04N60S5

isc N-Channel MOSFET Transistor SPD04N60S5,ISPD04N60S5FEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600

 6.1. Size:744K  infineon
 spd04n60c3 spu04n60c3.pdf

SPD04N60S5 SPD04N60S5

VDS Tjmax G G G G

 6.2. Size:245K  inchange semiconductor
 spd04n60c3.pdf

SPD04N60S5 SPD04N60S5

isc N-Channel MOSFET Transistor SPD04N60C3,ISPD04N60C3FEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 8.1. Size:389K  infineon
 spd04n80c3.pdf

SPD04N60S5 SPD04N60S5

SPD04N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 1.3WDS(on)max Extreme dv/dt ratedQ 23 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant; available in Halogen free mold compounda)PG-TO252-3

 8.2. Size:733K  infineon
 spd04n50c3.pdf

SPD04N60S5 SPD04N60S5

VDS Tjmax G ; available in Halogen free mold compounda) G

 8.3. Size:245K  inchange semiconductor
 spd04n80c3.pdf

SPD04N60S5 SPD04N60S5

isc N-Channel MOSFET Transistor SPD04N80C3,ISPD04N80C3FEATURESStatic drain-source on-resistance:RDS(on)1.3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 8

 8.4. Size:244K  inchange semiconductor
 spd04n50c3.pdf

SPD04N60S5 SPD04N60S5

isc N-Channel MOSFET Transistor SPD04N50C3,ISPD04N50C3FEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 560

Datasheet: SPD02N60C3 , SPD02N60S5 , SPD02N80C3 , SPD03N50C3 , SPD03N60C3 , SPD03N60S5 , SPD04N50C3 , SPD04N60C3 , 2N7000 , SPD04N80C3 , SPD04P10PG , SPD04P10PLG , SPD06N60C3 , SPD06N80C3 , SPD07N20G , SPD07N60C3 , SPD07N60S5 .

 

 
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