SPD08N50C3 PDF and Equivalents Search

 

SPD08N50C3 Specs and Replacement

Type Designator: SPD08N50C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO252

SPD08N50C3 substitution

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SPD08N50C3 datasheet

 ..1. Size:614K  infineon
spd08n50c3.pdf pdf_icon

SPD08N50C3

SPD08N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.6 A Worldwide best RDS(on) in TO-252 PG-TO252 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPD08N50C3 PG-TO25... See More ⇒

 ..2. Size:244K  inchange semiconductor
spd08n50c3.pdf pdf_icon

SPD08N50C3

isc N-Channel MOSFET Transistor SPD08N50C3, ISPD08N50C3 FEATURES Static drain-source on-resistance RDS(on) 600m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 50... See More ⇒

 8.1. Size:138K  infineon
spd08n10.pdf pdf_icon

SPD08N50C3

SPD 08N10 Preliminary Data SIPMOS Power Transistor Product Summary Features Drain source voltage 100 V VDS N channel Drain-Source on-state resistance 0.3 RDS(on) Enhancement mode Continuous drain current 8.4 A ID Avalanche rated dv/dt rated Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S SPD08N10 P-TO252 Q67040-S4126 Tape and Reel SPU08N10 ... See More ⇒

 8.2. Size:134K  infineon
spd08n05.pdf pdf_icon

SPD08N50C3

SPD 08N05L SIPMOS PowerTransistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.1 RDS(on) Enhancement mode Continuous drain current 8.4 A ID Avalanche rated Logic Level dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S SPD08N05L P-TO252 Q670... See More ⇒

Detailed specifications: SPD04N80C3 , SPD04P10PG , SPD04P10PLG , SPD06N60C3 , SPD06N80C3 , SPD07N20G , SPD07N60C3 , SPD07N60S5 , AO4407A , SPD08P06PG , SPD09P06PLG , SPD15P10PG , SPD15P10PLG , SPD18P06PG , SPD30N03S2L-07G , SPD30N03S2L-10G , SPD30N03S2L-20G .

Keywords - SPD08N50C3 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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