SPD30N03S2L-10G
MOSFET. Datasheet pdf. Equivalent
Type Designator: SPD30N03S2L-10G
Marking Code: 2N03L10
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 31.4
nC
trⓘ - Rise Time: 13
nS
Cossⓘ -
Output Capacitance: 450
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0146
Ohm
Package:
TO252
SPD30N03S2L-10G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPD30N03S2L-10G
Datasheet (PDF)
..1. Size:631K infineon
spd30n03s2l-10 .pdf 
SPD30N03S2L-10 GOptiMOS Power-TransistorFeature Product Summary N-Channel VDS30 V Enhancement mode RDS(on) 10 m Logic Level ID 30 APG-TO252-3 Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS complian
..2. Size:586K infineon
spd30n03s2l-10.pdf
SPD30N03S2L-10 GOptiMOS Power-TransistorFeature Product Summary N-Channel VDS30 V Enhancement mode RDS(on) 10 m Logic Level ID 30 APG-TO252-3 Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS complian
2.1. Size:682K infineon
spd30n03s2l-20.pdf
GSPD30N03S2L-20 OptiMOS Power-TransistorFeature Product Summary N-Channel VDS30 V Enhancement modeRDS(on) 20 m Logic LevelID 30 APG- TO252 -3 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS compliantMarkingType Package
2.2. Size:651K infineon
spd30n03s2l-07.pdf
SPD30N03S2L-07 GOptiMOS Power-TransistorProduct SummaryFeatureVDS N-Channel30 V Enhancement modeRDS(on) 6.7 m Logic LevelID 30 APG-TO252-3 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated. Pb-free lead plating; RoHS compliantType Package Marking
3.1. Size:243K inchange semiconductor
spd30n03s2l.pdf
isc N-Channel MOSFET Transistor SPD30N03S2L,ISPD30N03S2LFEATURESStatic drain-source on-resistance:RDS(on)10mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuperior thermal resistanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage
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