All MOSFET. SPP07N60CFD Datasheet

 

SPP07N60CFD Datasheet and Replacement


   Type Designator: SPP07N60CFD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO220
 

 SPP07N60CFD substitution

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SPP07N60CFD Datasheet (PDF)

 ..1. Size:568K  infineon
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SPP07N60CFD

SPP07N60CFDCoolMOSTM Power TransistorProduct SummaryFeaturesV @Tjmax 650 VDS Intrinsic fast-recovery body diodeR 0.7DS(on),max Extremely low reverse recovery chargeI 6.6 AD Ultra low gate charge Extreme dv /dt ratedPG-TO220 High peak current capability Qualified for industrial grade applications according to JEDEC1)CoolMOS CFD designed for:

 ..2. Size:247K  inchange semiconductor
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SPP07N60CFD

isc N-Channel MOSFET Transistor SPP07N60CFDISPP07N60CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.7Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

 5.1. Size:702K  infineon
spp07n60c3 spi07n60c3 spa07n60c3.pdf pdf_icon

SPP07N60CFD

SPP07N60C3SPI07N60C3, SPA07N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 P

 5.2. Size:620K  infineon
spp07n60c3 spa07n60c3 spi07n60c3 rev.3.2.pdf pdf_icon

SPP07N60CFD

SPP07N60C3SPI07N60C3, SPA07N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 High peak current capability2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1 P

Datasheet: SPP03N60S5 , SPP04N50C3 , SPP04N60C3 , SPP04N60S5 , SPP04N80C3 , SPP06N60C3 , SPP06N80C3 , SPP07N60C3 , 2SK3568 , SPP07N60S5 , SPP07N65C3 , SPP08N50C3 , SPP08N80C3 , SPP08P06PH , SPP11N60C3 , SPP11N60CFD , SPP11N60S5 .

History: RFP5P12 | IRF820ASPBF | IRFY430CM

Keywords - SPP07N60CFD MOSFET datasheet

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