SPP07N60CFD PDF and Equivalents Search

 ..1. Size:568K  infineon
 spp07n60cfd.pdf

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 ..2. Size:247K  inchange semiconductor
 spp07n60cfd.pdf

isc N-Channel MOSFET Transistor SPP07N60CFD ISPP07N60CFD FEATURES Static drain-source on-resistance RDS(on) 0.7 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

 5.1. Size:702K  infineon
 spp07n60c3 spi07n60c3 spa07n60c3.pdf

SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.3 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated 3 High peak current capability 2 3 2 1 1 P-TO220-3-31 Improved transconductance P-TO220-3-1 P... See More ⇒

 5.2. Size:620K  infineon
 spp07n60c3 spa07n60c3 spi07n60c3 rev.3.2.pdf

SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.3 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated 3 High peak current capability 2 3 2 1 1 P-TO220-3-31 Improved transconductance P-TO220-3-1 P... See More ⇒

 5.3. Size:158K  infineon
 spa07n60c2 spp07n60c2 spb07n60c2.pdf

SPP07N60C2, SPB07N60C2 Final data SPA07N60C2 Cool MOS Power Transistor Feature Product Summary New revolutionary high voltage technology VDS @ Tjmax 650 V Ultra low gate charge RDS(on) 0.6 Periodic avalanche rated ID 7.3 A Extreme dv/dt rated Ultra low effective capacitances P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 3 2 1 P-TO220-3-31 Type Package Orderi... See More ⇒

 5.4. Size:248K  inchange semiconductor
 spp07n60c3.pdf

isc N-Channel MOSFET Transistor SPP07N60C3 ISPP07N60C3 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability Improved transconductance ABSOLUTE MA... See More ⇒