SPP11N80C3 Specs and Replacement

Type Designator: SPP11N80C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: TO220

SPP11N80C3 substitution

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SPP11N80C3 datasheet

 ..1. Size:488K  infineon
 spp11n80c3.pdf pdf_icon

SPP11N80C3

SPP11N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 0.45 DS(on)max Extreme dv/dt rated Q 64 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low eff... See More ⇒

 ..2. Size:205K  inchange semiconductor
 spp11n80c3.pdf pdf_icon

SPP11N80C3

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPP11N80C3 FEATURES Ultra low effective capacitances Low gate charge Improved transconductance Low gate drive power loss 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA... See More ⇒

 8.1. Size:641K  infineon
 spp11n60cfd.pdf pdf_icon

SPP11N80C3

SPP11N60CFD C I MOS P wer Transist r VDS @ Tjmax 650 V Feature RDS(on) 0.44 New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO220 Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge Type Package Ordering C de Marking SPP11N60CF... See More ⇒

 8.2. Size:678K  infineon
 spp11n60c3 spi11n60c3 spa11n60c3 spa11n60c3e8185.pdf pdf_icon

SPP11N80C3

SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.38 New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 High peak current capability 2 1 P-TO220-3-31 Improved transconductance PG-TO-2... See More ⇒

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Detailed specifications: SPP07N65C3, SPP08N50C3, SPP08N80C3, SPP08P06PH, SPP11N60C3, SPP11N60CFD, SPP11N60S5, SPP11N65C3, AON6380, SPP12N50C3, SPP15N60C3, SPP15N60CFD, SPP15N65C3, SPP15P10PG, SPP15P10PLH, SPP16N50C3, SPP17N80C3

Keywords - SPP11N80C3 MOSFET specs

 SPP11N80C3 cross reference

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 SPP11N80C3 substitution

 SPP11N80C3 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs