SPP15N60CFD Specs and Replacement

Type Designator: SPP15N60CFD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm

Package: TO220

SPP15N60CFD substitution

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SPP15N60CFD datasheet

 ..1. Size:537K  infineon
spp15n60cfd.pdf pdf_icon

SPP15N60CFD

SPP15N60CFD CoolMOSTM Power Transistor Product Summary Features V @ Tjmax 650 V DS Intrinsic fast-recovery body diode R 0.330 DS(on),max Extremely low reverse recovery charge I 13.4 A D Ultra low gate charge Extreme dv /dt rated PG-TO220 High peak current capability Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed fo... See More ⇒

 ..2. Size:247K  inchange semiconductor
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SPP15N60CFD

isc N-Channel MOSFET Transistor SPP15N60CFD ISPP15N60CFD FEATURES Static drain-source on-resistance RDS(on) 0.33 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

 5.1. Size:700K  infineon
spp15n60c3 spi15n60c3 spa15n60c3.pdf pdf_icon

SPP15N60CFD

SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.28 New revolutionary high voltage technology ID 15 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111... See More ⇒

 5.2. Size:684K  infineon
spp15n60c3 spi15n60c3 spa15n60c3 rev.3.2new.pdf pdf_icon

SPP15N60CFD

SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.28 New revolutionary high voltage technology ID 15 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111... See More ⇒

Detailed specifications: SPP08P06PH, SPP11N60C3, SPP11N60CFD, SPP11N60S5, SPP11N65C3, SPP11N80C3, SPP12N50C3, SPP15N60C3, NCEP15T14, SPP15N65C3, SPP15P10PG, SPP15P10PLH, SPP16N50C3, SPP17N80C3, SPP18P06PH, SPP20N60C3, SPP20N60CFD

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.