SPP15N60CFD
MOSFET. Datasheet pdf. Equivalent
Type Designator: SPP15N60CFD
Marking Code: 15N60CFD
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 156
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 13.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 63
nC
trⓘ - Rise Time: 24
nS
Cossⓘ -
Output Capacitance: 520
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.33
Ohm
Package:
TO220
SPP15N60CFD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPP15N60CFD
Datasheet (PDF)
..1. Size:537K infineon
spp15n60cfd.pdf
SPP15N60CFDCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tjmax 650 VDS Intrinsic fast-recovery body diodeR 0.330 DS(on),max Extremely low reverse recovery chargeI 13.4 AD Ultra low gate charge Extreme dv /dt ratedPG-TO220 High peak current capability Qualified for industrial grade applications according to JEDEC1)CoolMOS CFD designed fo
..2. Size:247K inchange semiconductor
spp15n60cfd.pdf
isc N-Channel MOSFET Transistor SPP15N60CFDISPP15N60CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.33Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a
5.1. Size:700K infineon
spp15n60c3 spi15n60c3 spa15n60c3.pdf
SPP15N60C3, SPI15N60C3SPA15N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.28 New revolutionary high voltage technologyID 15 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 Ultra low effective capacitances21P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111
5.2. Size:684K infineon
spp15n60c3 spi15n60c3 spa15n60c3 rev.3.2new.pdf
SPP15N60C3, SPI15N60C3SPA15N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.28 New revolutionary high voltage technologyID 15 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 Ultra low effective capacitances21P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111
5.3. Size:205K inchange semiconductor
spp15n60c3.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPP15N60C3FEATURESUltra low effective capacitancesLow gate chargeImproved transconductanceLow gate drive power loss100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
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