All MOSFET. SPU04N60C3 Datasheet

 

SPU04N60C3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPU04N60C3
   Marking Code: 04N60C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO251

 SPU04N60C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPU04N60C3 Datasheet (PDF)

 ..1. Size:744K  infineon
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SPU04N60C3 SPU04N60C3

VDS Tjmax G G G G

 ..2. Size:853K  cn vbsemi
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SPU04N60C3 SPU04N60C3

SPU04N60C3www.VBsemi.twN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650RequirementRoHSRDS(on) ()VGS = 10 V 2.0COMPLIANT Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compli

 ..3. Size:208K  inchange semiconductor
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SPU04N60C3 SPU04N60C3

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPU04N60C3FEATURESWith To-251(IPAK) packageNew revolutionary high voltage technologyUltra low gate chargeHigh peak current capabilityImproved transconductance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsA

 6.1. Size:268K  1
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SPU04N60C3 SPU04N60C3

SPU04N60S5SPD04N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.95 New revolutionary high voltage technologyID 4.5 A Ultra low gate chargeP-TO252. P-TO251. Periodic avalanche rated Extreme dv/dt rated23 Ultra low effective capacitances3121 Improved transconductanceType Package Ordering Code Marking04N60S5SPU04N60S5 P-T

 6.2. Size:261K  inchange semiconductor
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SPU04N60C3 SPU04N60C3

isc N-Channel MOSFET Transistor SPU04N60S5FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

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