SPW11N60CFD Specs and Replacement
Type Designator: SPW11N60CFD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 390 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm
Package: TO247
SPW11N60CFD substitution
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SPW11N60CFD datasheet
spw11n60cfd.pdf
SPW11N60CFD C I MOS P wer TransIst r VDS @ Tjmax 650 V DS Feature RDS(on) 0.44 New revolutionary high voltage technology ID 11 A 11 Ultra low gate charge PG-TO247 Periodic avalanche rated Extreme dv/dt rated /d High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge 0) Qualified for industrial grade ... See More ⇒
spw11n60cfd.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPW11N60CFD ISPW11N60CFD FEATURES Static drain-source on-resistance RDS(on) 440m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒
spw11n60c3.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPW11N60C3 ISPW11N60C3 FEATURES Static drain-source on-resistance RDS(on) 380m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒
Detailed specifications: SPU03N60C3, SPU03N60S5, SPU04N60C3, SPU04N60S5, SPU07N60C3, SPU07N60S5, SPW07N60CFD, SPW11N60C3, 7N60, SPW11N60S5, SPW11N80C3, SPW12N50C3, SPW15N60C3, SPW15N60CFD, SPW16N50C3, SPW17N80C3, SPW20N60C3
Keywords - SPW11N60CFD MOSFET specs
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