SPW47N65C3 Datasheet and Replacement

SPW47N65C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 650 VDS Worldwide best R in TO247ds,onR 0.07DS(on),max Low gate chargeQ 255 nCg,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO247-3-1Type Package MarkingSPW47N65C3 PG-TO247

isc N-Channel MOSFET Transistor SPW47N65C3ISPW47N65C3FEATURESStatic drain-source on-resistance:RDS(on)70mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION High peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

SPW47N60CFDTMCIMOSTM "9@/; %;+877+;BFeatures V - R (7H C7GA>FE;A@3CJ :;9: GA>E397 E75:@A>A9JDS(on) maxR $@EC;@D;5 83DE C75AG7CJ 4A6J 6;A67 46 A46DR IEC7?7>J >AH C7G7CD7 C75AG7CJ 5:3C97R / >EC3 >AH 93E7 5:3C97PGTO247R IEC7?7 6v /dt C3E76/dR #;9: B73= 5FCC7@E 53B34;>;EJR *7C;A6;5 3G3>3@5:7 C3E76R + F3>;8;76 355AC6;@9 EA % R *4 8C77

VDS Tjmax G G

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW47N60CFDISPW47N60CFDFEATURESStatic drain-source on-resistance:RDS(on)83mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Peak Current CapabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

isc N-Channel MOSFET Transistor SPW47N60C3ISPW47N60C3FEATURESStatic drain-source on-resistance:RDS(on)70mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved TransconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600