All MOSFET. IRF1010EZL Datasheet

 

IRF1010EZL Datasheet and Replacement


   Type Designator: IRF1010EZL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 84 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO262
 

 IRF1010EZL substitution

   - MOSFET ⓘ Cross-Reference Search

 

IRF1010EZL Datasheet (PDF)

 ..1. Size:407K  international rectifier
irf1010ezpbf irf1010ezspbf irf1010ezlpbf.pdf pdf_icon

IRF1010EZL

PD - 95483CIRF1010EZPbFIRF1010EZSPbFIRF1010EZLPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating DVDSS = 60V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 8.5m Lead-FreeGID = 75ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing tech

 ..2. Size:407K  international rectifier
irf1010ezlpbf irf1010ezpbf irf1010ezspbf.pdf pdf_icon

IRF1010EZL

PD - 95483CIRF1010EZPbFIRF1010EZSPbFIRF1010EZLPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating DVDSS = 60V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 8.5m Lead-FreeGID = 75ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing tech

 0.1. Size:756K  infineon
auirf1010ez auirf1010ezs auirf1010ezl.pdf pdf_icon

IRF1010EZL

AUIRF1010EZ AUIRF1010EZS AUTOMOTIVE GRADE AUIRF1010EZL Features VDSS 60V Advanced Process Technology RDS(on) typ. 6.8m Ultra Low On-Resistance max. 8.5m 175C Operating Temperature ID (Silicon Limited) 84A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive Q

 5.1. Size:375K  international rectifier
auirf1010ezstrl.pdf pdf_icon

IRF1010EZL

PD - 95962AUTOMOTIVE GRADEAUIRF1010EZAUIRF1010EZSAUIRF1010EZLFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceDV(BR)DSS60V 175C Operating Temperature Fast Switching RDS(on) max.8.5m Repetitive Avalanche Allowed up to TjmaxGID (Silicon Limited)84A Lead-Free, RoHS CompliantS Automotive Qualified *ID (Package Limited)

Datasheet: SPW32N50C3 , SPW35N60C3 , SPW35N60CFD , SPW47N60C3 , SPW47N60CFD , SPW47N65C3 , SPW52N50C3 , IRF1010EZ , 20N60 , IRF1010EZS , IRF1010Z , IRF1010ZL , IRF1010ZS , IRF1018E , IRF1018ES , IRF1018ESL , IRF1104L .

Keywords - IRF1010EZL MOSFET datasheet

 IRF1010EZL cross reference
 IRF1010EZL equivalent finder
 IRF1010EZL lookup
 IRF1010EZL substitution
 IRF1010EZL replacement

 

 
Back to Top

 


 
.