All MOSFET. IRF1010ZS Datasheet

 

IRF1010ZS Datasheet and Replacement


   Type Designator: IRF1010ZS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 94 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO263
 

 IRF1010ZS substitution

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IRF1010ZS Datasheet (PDF)

 ..1. Size:399K  international rectifier
 irf1010zlpbf irf1010zpbf irf1010zspbf.pdf pdf_icon

IRF1010ZS

PD - 95361AIRF1010ZPbFIRF1010ZSPbFIRF1010ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel 175C Operating Temperature Dl Fast Switching VDSS = 55Vl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeRDS(on) = 7.5mGDescriptionID = 75AThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extr

 ..2. Size:252K  inchange semiconductor
 irf1010zs.pdf pdf_icon

IRF1010ZS

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010ZSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMU

 0.1. Size:268K  international rectifier
 auirf1010zstrl.pdf pdf_icon

IRF1010ZS

PD - 97458AAUIRF1010ZAUTOMOTIVE GRADEAUIRF1010ZSAUIRF1010ZLFeatures Advanced Process Technology HEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureV(BR)DSS55V Fast Switching Repetitive Avalanche Allowed up toRDS(on) max.7.5mTjmaxG Lead-Free, RoHS CompliantID (Silicon Limited)94A Automotive Qualified *S

 0.2. Size:752K  infineon
 auirf1010z auirf1010zs auirf1010zl.pdf pdf_icon

IRF1010ZS

AUIRF1010Z AUIRF1010ZS AUTOMOTIVE GRADE AUIRF1010ZL Features HEXFET Power MOSFET Advanced Process Technology VDSS 55V Ultra Low On-Resistance RDS(on) max. 7.5m 175C Operating Temperature Fast Switching ID (Silicon Limited) 94A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive

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Datasheet: SPW47N60CFD , SPW47N65C3 , SPW52N50C3 , IRF1010EZ , IRF1010EZL , IRF1010EZS , IRF1010Z , IRF1010ZL , IRF640 , IRF1018E , IRF1018ES , IRF1018ESL , IRF1104L , IRF1104S , IRF1324 , IRF1324L , IRF1324S .

Keywords - IRF1010ZS MOSFET datasheet

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