IRF1010ZS MOSFET Datasheet: N-Ch, 55V, 94A. Full specification with pinout and replacement list

IRF1010ZS Specs and Replacement

Type Designator: IRF1010ZS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 94 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO263

IRF1010ZS substitution

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IRF1010ZS datasheet

..1. Size:399K international rectifier
irf1010zlpbf irf1010zpbf irf1010zspbf.pdf pdf_icon

PD - 95361A IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l 175 C Operating Temperature D l Fast Switching VDSS = 55V l Repetitive Avalanche Allowed up to Tjmax l Lead-Free RDS(on) = 7.5m G Description ID = 75A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extr... See More ⇒

..2. Size:252K inchange semiconductor
irf1010zs.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1010ZS FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMU... See More ⇒

0.1. Size:268K international rectifier
auirf1010zstrl.pdf pdf_icon

PD - 97458A AUIRF1010Z AUTOMOTIVE GRADE AUIRF1010ZS AUIRF1010ZL Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature V(BR)DSS 55V Fast Switching Repetitive Avalanche Allowed up to RDS(on) max. 7.5m Tjmax G Lead-Free, RoHS Compliant ID (Silicon Limited) 94A Automotive Qualified * S... See More ⇒

0.2. Size:752K infineon
auirf1010z auirf1010zs auirf1010zl.pdf pdf_icon

AUIRF1010Z AUIRF1010ZS AUTOMOTIVE GRADE AUIRF1010ZL Features HEXFET Power MOSFET Advanced Process Technology VDSS 55V Ultra Low On-Resistance RDS(on) max. 7.5m 175 C Operating Temperature Fast Switching ID (Silicon Limited) 94A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive ... See More ⇒