All MOSFET. IRF2204 Datasheet

 

IRF2204 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF2204

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 330 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 210 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 130 nC

Rise Time (tr): 140 nS

Drain-Source Capacitance (Cd): 1570 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0036 Ohm

Package: TO220AB

IRF2204 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF2204 Datasheet (PDF)

..1. irf2204pbf.pdf Size:258K _international_rectifier

IRF2204 IRF2204

PD - 95490AIRF2204PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDFeaturesVDSS = 40V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 3.6m Dynamic dv/dt RatingG 175C Operating TemperatureID = 210A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis HEXFET Power MOSFET utilizes the las

..2. irf2204.pdf Size:141K _international_rectifier

IRF2204 IRF2204

PD - 94434AUTOMOTIVE MOSFETIRF2204Typical ApplicationsHEXFET Power MOSFET Electric Power SteeringD 14 Volts Automotive Electrical SystemsVDSS = 40VFeatures Advanced Process TechnologyRDS(on) = 3.6m Ultra Low On-ResistanceG Dynamic dv/dt Rating 175C Operating Temperature ID = 210AS Fast Switching Repetitive Avalanche Allowed u

..3. irf2204pbf.pdf Size:258K _infineon

IRF2204 IRF2204

PD - 95490AIRF2204PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDFeaturesVDSS = 40V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 3.6m Dynamic dv/dt RatingG 175C Operating TemperatureID = 210A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis HEXFET Power MOSFET utilizes the las

..4. irf2204.pdf Size:245K _inchange_semiconductor

IRF2204 IRF2204

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF2204IIRF2204FEATURESStatic drain-source on-resistance:RDS(on) 3.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

0.1. irf2204lpbf irf2204spbf.pdf Size:323K _international_rectifier

IRF2204 IRF2204

PD - 95491AIRF2204SPbFTypical Applications IRF2204LPbF Industrial Motor DriveHEXFET Power MOSFETDFeaturesVDSS = 40V Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 3.6mG 175C Operating Temperature Fast SwitchingID = 170A Repetitive Avalanche Allowed up to TjmaxS Lead-FreeDescriptionThis HEXFET Power MOSFET util

0.2. irf2204s.pdf Size:251K _inchange_semiconductor

IRF2204 IRF2204

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF2204SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM

 

 8.1. irf220 irf221 irf222 irf223.pdf Size:68K _harris_semi

IRF2204 IRF2204

Semiconductor IRF220, IRF221,IRF222, IRF2234.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm,N-Channel Power MOSFETsOctober 1997Features Description 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.8 and 1.2MOSFETs designed, tested, and guaranteed to withstand aspecified

Datasheet: IRF1405ZS-7P , IRF1407 , IRF1407L , IRF1407S , IRF1503 , IRF1503S , IRF1607 , IRF1902 , IRF640N , IRF2204L , IRF2204S , IRF2804 , IRF2804L , IRF2804S , IRF2804S-7P , IRF2805 , IRF2805L .

 

 
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