IRF2204 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF2204
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 330 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 210 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 130 nC
Rise Time (tr): 140 nS
Drain-Source Capacitance (Cd): 1570 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0036 Ohm
Package: TO220AB
IRF2204 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF2204 Datasheet (PDF)
..1. irf2204pbf.pdf 
Size:258K _international_rectifier
PD - 95490AIRF2204PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDFeaturesVDSS = 40V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 3.6m Dynamic dv/dt RatingG 175C Operating TemperatureID = 210A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis HEXFET Power MOSFET utilizes the las
..2. irf2204.pdf Size:141K _international_rectifier
PD - 94434AUTOMOTIVE MOSFETIRF2204Typical ApplicationsHEXFET Power MOSFET Electric Power SteeringD 14 Volts Automotive Electrical SystemsVDSS = 40VFeatures Advanced Process TechnologyRDS(on) = 3.6m Ultra Low On-ResistanceG Dynamic dv/dt Rating 175C Operating Temperature ID = 210AS Fast Switching Repetitive Avalanche Allowed u
..3. irf2204pbf.pdf Size:258K _infineon
PD - 95490AIRF2204PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDFeaturesVDSS = 40V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 3.6m Dynamic dv/dt RatingG 175C Operating TemperatureID = 210A Fast SwitchingS Repetitive Avalanche Allowed up to Tjmax Lead-FreeDescriptionThis HEXFET Power MOSFET utilizes the las
..4. irf2204.pdf Size:245K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF2204IIRF2204FEATURESStatic drain-source on-resistance:RDS(on) 3.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
0.1. irf2204lpbf irf2204spbf.pdf Size:323K _international_rectifier
PD - 95491AIRF2204SPbFTypical Applications IRF2204LPbF Industrial Motor DriveHEXFET Power MOSFETDFeaturesVDSS = 40V Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 3.6mG 175C Operating Temperature Fast SwitchingID = 170A Repetitive Avalanche Allowed up to TjmaxS Lead-FreeDescriptionThis HEXFET Power MOSFET util
0.2. irf2204s.pdf Size:251K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF2204SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM
8.1. irf220 irf221 irf222 irf223.pdf Size:68K _harris_semi
Semiconductor IRF220, IRF221,IRF222, IRF2234.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm,N-Channel Power MOSFETsOctober 1997Features Description 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.8 and 1.2MOSFETs designed, tested, and guaranteed to withstand aspecified
Datasheet: IRF1405ZS-7P , IRF1407 , IRF1407L , IRF1407S , IRF1503 , IRF1503S , IRF1607 , IRF1902 , IRF640N , IRF2204L , IRF2204S , IRF2804 , IRF2804L , IRF2804S , IRF2804S-7P , IRF2805 , IRF2805L .
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