All MOSFET. IRF2804L Datasheet

 

IRF2804L MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF2804L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 300 W
   Maximum Drain-Source Voltage |Vds|: 40 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 270 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 160 nC
   Rise Time (tr): 120 nS
   Drain-Source Capacitance (Cd): 1690 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.002 Ohm
   Package: TO262

 IRF2804L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF2804L Datasheet (PDF)

 ..1. Size:408K  international rectifier
irf2804lpbf irf2804pbf irf2804spbf.pdf

IRF2804L
IRF2804L

PD - 95332BIRF2804PbFIRF2804SPbFIRF2804LPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 40Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 2.0ml Lead-FreeGID = 75ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve e

 ..2. Size:408K  infineon
irf2804pbf irf2804spbf irf2804lpbf.pdf

IRF2804L
IRF2804L

PD - 95332BIRF2804PbFIRF2804SPbFIRF2804LPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 40Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 2.0ml Lead-FreeGID = 75ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve e

 0.1. Size:750K  infineon
auirf2804 auirf2804s auirf2804l.pdf

IRF2804L
IRF2804L

AUIRF2804 AUIRF2804S AUTOMOTIVE GRADE AUIRF2804L Features VDSS 40V Advanced Process Technology RDS(on) typ. 1.5m Ultra Low On-Resistance max. 2.0m 175C Operating Temperature ID (Silicon Limited) 270A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 195A Lead-Free, RoHS Compliant Aut

 7.1. Size:281K  international rectifier
auirf2804strr.pdf

IRF2804L
IRF2804L

AUTOMOTIVE GRADE PD -96290AAUIRF2804AUIRF2804SAUIRF2804LFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceV(BR)DSS 40VDl 175C Operating TemperatureRDS(on) typ. 1.5m l Fast Switchingl Repetitive Avalanche Allowed up to Tjmax max. 2.0m Gl Lead-Free, RoHS CompliantID (Silicon Limited) 270A l Automotive Qualified *SID

 7.2. Size:569K  international rectifier
irf2804.pdf

IRF2804L
IRF2804L

PD - 94436BAUTOMOTIVE MOSFETIRF2804HEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 40V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 2.3m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes the latest

 7.3. Size:280K  international rectifier
irf2804s-7ppbf.pdf

IRF2804L
IRF2804L

PD - 97057AIRF2804S-7PPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating Temperaturel Fast SwitchingVDSS = 40Vl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeGRDS(on) = 1.6mDescriptionSThis HEXFET Power MOSFET utilizes the latestID = 160AS (Pin 2, 3 ,5,6,7)processing techniques to achieve extr

 7.4. Size:214K  international rectifier
auirf2804wl.pdf

IRF2804L
IRF2804L

PD - 97739AUTOMOTIVE GRADEAUIRF2804WLHEXFET Power MOSFETFeaturesDV(BR)DSSl Advanced Process Technology 40Vl Ultra Low On-ResistanceRDS(on) max.1.8ml 175C Operating TemperatureGl Fast Switching ID (Silicon Limited)295Al Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)240Al Lead-Free, RoHS Compliantl Automotive Qualified *Description

 7.5. Size:355K  infineon
auirf2804s-7p.pdf

IRF2804L
IRF2804L

AUIRF2804S-7P AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max. 1.6m Fast Switching ID (Silicon Limited) 320A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 240A Automotive Qualified * Desc

 7.6. Size:214K  infineon
auirf2804wl.pdf

IRF2804L
IRF2804L

PD - 97739AUTOMOTIVE GRADEAUIRF2804WLHEXFET Power MOSFETFeaturesDV(BR)DSSl Advanced Process Technology 40Vl Ultra Low On-ResistanceRDS(on) max.1.8ml 175C Operating TemperatureGl Fast Switching ID (Silicon Limited)295Al Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)240Al Lead-Free, RoHS Compliantl Automotive Qualified *Description

 7.7. Size:270K  inchange semiconductor
irf2804s.pdf

IRF2804L
IRF2804L

isc N-Channel MOSFET Transistor IRF2804SDESCRIPTIONStatic drain-source on-resistance:RDS(on) 6m@V = 10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Provides the designer with an extremely efficient andreliable device for use in a wide variety of applications.ABSOLUTE MAXIMUM RATINGS(

 7.8. Size:246K  inchange semiconductor
irf2804.pdf

IRF2804L
IRF2804L

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF2804IIRF2804FEATURESStatic drain-source on-resistance:RDS(on) 2.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 18N50 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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