IRF4104 Specs and Replacement

Type Designator: IRF4104

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 660 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO220AB

IRF4104 substitution

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IRF4104 datasheet

 ..1. Size:376K  international rectifier
irf4104lpbf irf4104pbf irf4104spbf.pdf pdf_icon

IRF4104

PD - 95468A IRF4104PbF IRF4104SPbF IRF4104LPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 40V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 5.5m Lead-Free G Description ID = 75A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely... See More ⇒

 ..2. Size:376K  international rectifier
irf4104pbf irf4104spbf irf4104lpbf.pdf pdf_icon

IRF4104

PD - 95468A IRF4104PbF IRF4104SPbF IRF4104LPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 40V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 5.5m Lead-Free G Description ID = 75A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely... See More ⇒

 ..3. Size:245K  inchange semiconductor
irf4104.pdf pdf_icon

IRF4104

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF4104 IIRF4104 FEATURES Static drain-source on-resistance RDS(on) 5.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R... See More ⇒

 0.1. Size:277K  international rectifier
irf4104l.pdf pdf_icon

IRF4104

PD - 94639A IRF4104 AUTOMOTIVE MOSFET IRF4104S IRF4104L Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 5.5m G Description ID = 75A Specifically designed for Automotive applications, S this HEXFET Power MOSFET... See More ⇒

Detailed specifications: IRF3711ZS, IRF3717, IRF3805, IRF3805L, IRF3805S, IRF3805S-7P, IRF3808, IRF3808S, IRF740, IRF4104G, IRF4104S, IRF540Z, IRF540ZL, IRF540ZS, IRF5801, IRF5802, IRF6201

Keywords - IRF4104 MOSFET specs

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