All MOSFET. IRF4104 Datasheet

 

IRF4104 Datasheet and Replacement


   Type Designator: IRF4104
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO220AB
 

 IRF4104 substitution

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IRF4104 Datasheet (PDF)

 ..1. Size:376K  international rectifier
irf4104lpbf irf4104pbf irf4104spbf.pdf pdf_icon

IRF4104

PD - 95468AIRF4104PbFIRF4104SPbFIRF4104LPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 40V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 5.5m Lead-FreeGDescriptionID = 75A This HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely

 ..2. Size:376K  international rectifier
irf4104pbf irf4104spbf irf4104lpbf.pdf pdf_icon

IRF4104

PD - 95468AIRF4104PbFIRF4104SPbFIRF4104LPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 40V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 5.5m Lead-FreeGDescriptionID = 75A This HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely

 ..3. Size:245K  inchange semiconductor
irf4104.pdf pdf_icon

IRF4104

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF4104IIRF4104FEATURESStatic drain-source on-resistance:RDS(on) 5.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

 0.1. Size:277K  international rectifier
irf4104l.pdf pdf_icon

IRF4104

PD - 94639AIRF4104AUTOMOTIVE MOSFETIRF4104SIRF4104LFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 5.5mGDescriptionID = 75ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFET

Datasheet: IRF3711ZS , IRF3717 , IRF3805 , IRF3805L , IRF3805S , IRF3805S-7P , IRF3808 , IRF3808S , IRF740 , IRF4104G , IRF4104S , IRF540Z , IRF540ZL , IRF540ZS , IRF5801 , IRF5802 , IRF6201 .

History: FTK2N65P

Keywords - IRF4104 MOSFET datasheet

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