BF904WR Datasheet and Replacement

DISCRETE SEMICONDUCTORSDATA SHEETBF904WRN-channel dual-gate MOS-FET1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual-gate MOS-FET BF904WRFEATURES PINNING Specially designed for use at 5 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high f

DISCRETE SEMICONDUCTORSDATA SHEETBF904WRN-channel dual-gate MOS-FET1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual-gate MOS-FET BF904WRFEATURES PINNING Specially designed for use at 5 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high f

DISCRETE SEMICONDUCTORS DATA SHEETBF904WRN-channel dual-gate MOS-FETProduct specification 2010 Sep 15Supersedes data of 1995 Apr 25NXP Semiconductors Product specificationN-channel dual-gate MOS-FET BF904WRFEATURES PINNING Specially designed for use at 5 V supply voltagePIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b sourceadmit

BF904; BF904RN-channel dual gate MOS-FETsRev. 06 13 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown be

DISCRETE SEMICONDUCTORSDATA SHEETBF904; BF904RN-channel dual gate MOS-FETs1995 Apr 25Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationN-channel dual gate MOS-FETs BF904; BF904Rtransistor consists of an amplifier MOS-FET with sourceFEATURESand substrate interconnected and an internal bias circu

DISCRETE SEMICONDUCTORSDATA SHEETBF904; BF904RN-channel dual gate MOS-FETs1999 May 17Product specificationSupersedes data of 1997 Sep 05Philips Semiconductors Product specificationN-channel dual gate MOS-FETs BF904; BF904Rand substrate interconnected and an internal bias circuit toFEATURESensure good cross-modulation performance during AGC. Specially designed for use

BF904A; BF904AR; BF904AWRN-channel dual gate MOS-FETsRev. 04 13 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links