IRF6616 Datasheet and Replacement
Type Designator: IRF6616
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 560 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: DIRECTFET
IRF6616 substitution
IRF6616 Datasheet (PDF)
irf6616pbf irf6616trpbf.pdf

PD - 96100IRF6616PbFIRF6616TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) l Low Profile (
irf6616.pdf

PD - 96999BIRF6616DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) l Low Profile (
irf6610.pdf

PD - 97012IRF6610DirectFET Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free VDSS VGS RDS(on) RDS(on) Low Profile (
irf6614pbf irf6614trpbf.pdf

PD -97090IRF6614PbFIRF6614TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) RDS(on) l Lead-Free (Qualified up to 260C Reflow)40V max 20V max 5.9m@ 10V 7.1m@ 4.5Vl Application Specific MOSFETsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Converters19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8Vl Low
Datasheet: IRF6607 , IRF6608 , IRF6609 , IRF6610 , IRF6611 , IRF6612 , IRF6613 , IRF6614 , 7N65 , IRF6617 , IRF6618 , IRF6619 , IRF6620 , IRF6621 , IRF6622 , IRF6623 , IRF6626 .
Keywords - IRF6616 MOSFET datasheet
IRF6616 cross reference
IRF6616 equivalent finder
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History: SI1489EDH | GSM8936



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