IRF6641 Datasheet and Replacement
Type Designator: IRF6641
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 240 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0599 Ohm
Package: DIRECTFET
IRF6641 substitution
IRF6641 Datasheet (PDF)
irf6641pbf.pdf

PD - 97262IRF6641TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) l Lead-Free (Qualified up to 260C Reflow)200V max 20V max 51m@ 10Vl Application Specific MOSFETsQg tot Qgd Vgs(th) l Ideal for High Performance Isolated Converter34nC 9.5nC 4.0VPrimary Switch Socketl Optimized for Synchronous Rectifica
irf6644.pdf

PD - 96908EIRF6644DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) l Low Profile (
irf6646.pdf

PD - 96995AIRF6646DirectFET Power MOSFET Typical values (unless otherwise specified) RoHS compliant containing no lead or bromide VDSS VGS RDS(on) Low Profile (
irf6645pbf.pdf

IRF6645PbFIRF6645TRPbFDirectFET Power MOSFET l RoHS Compliant, Halogen-Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow) VDSS VGS RDS(on) l Application Specific MOSFETs100V max 20V max 28m@ 10Vl Ideal for High Performance Isolated ConverterPrimary Switch SocketQg tot Qgd Vgs(th) l Optimized for Synchronous Rectifica
Datasheet: IRF6629 , IRF6631 , IRF6633 , IRF6633A , IRF6635 , IRF6636 , IRF6637 , IRF6638 , 4N60 , IRF6643 , IRF6644 , IRF6645 , IRF6646 , IRF6648 , IRF6655 , IRF6662 , IRF6665 .
Keywords - IRF6641 MOSFET datasheet
IRF6641 cross reference
IRF6641 equivalent finder
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History: S70N08ZS | 2SK3322-S



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