IRF6665 Specs and Replacement
Type Designator: IRF6665
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.8 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm
Package: DIRECTFET
IRF6665 substitution
- MOSFET ⓘ Cross-Reference Search
IRF6665 datasheet
irf6665pbf irf6665trpbf.pdf
PD - 97230A IRF6665PbF DIGITAL AUDIO MOSFET IRF6665TRPbF Key Parameters Features VDS 100 V Latest MOSFET Silicon technology Key parameters optimized for Class-D audio amplifier RDS(on) typ. @ VGS = 10V 53 m applications Qg typ. 8.7 nC Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiency RG(int) typ. 1.9 Low Qrr for better THD... See More ⇒
irf6662pbf irf6662trpbf.pdf
PD - 97243A IRF6662PbF IRF6662TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) RoHs Compliant RDS(on) VDSS VGS Lead-Free (Qualified up to 260 C Reflow) 17.5m @ 10V 100V max 20V max Application Specific MOSFETs Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ideal for High Performance Isolated Converter Primary Switch Socket 22nC 6.8nC 1.2nC 50nC 11nC... See More ⇒
irf6662.pdf
PD - 97039A IRF6662 DirectFET Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free VDSS VGS RDS(on) Low Profile (... See More ⇒
Detailed specifications: IRF6641, IRF6643, IRF6644, IRF6645, IRF6646, IRF6648, IRF6655, IRF6662, AON7506, IRF6668, IRF6674, IRF6678, IRF6691, IRF6706S2, IRF6708S2, IRF6709S2, IRF6710S2
Keywords - IRF6665 MOSFET specs
IRF6665 cross reference
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IRF6665 substitution
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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