All MOSFET. IRF6668 Datasheet

 

IRF6668 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF6668
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.9 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: DIRECTFET

 IRF6668 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF6668 Datasheet (PDF)

 ..1. Size:630K  infineon
 irf6668pbf irf6668trpbf.pdf

IRF6668 IRF6668

PD - 97232AIRF6668PbFIRF6668TRPbFDirectFET Power MOSFET l RoHs Compliant Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)RDS(on) VDSS VGSl Application Specific MOSFETs12m@ 10Vl Ideal for High Performance Isolated Converter 80V max 20V maxPrimary Switch SocketQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for Synchronous

 8.1. Size:606K  international rectifier
 irf6665.pdf

IRF6668 IRF6668

PD - 96900CIRF6665DIGITAL AUDIO MOSFETKey ParametersFeaturesVDS100 V Latest MOSFET Silicon technology Key parameters optimized for Class-D audio amplifierRDS(on) typ. @ VGS = 10V 53 m: applicationsQg typ.8.7 nC Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiency RG(int) typ.1.9 Low Qrr for better THD and lower EMI

 8.2. Size:277K  international rectifier
 irf6662.pdf

IRF6668 IRF6668

PD - 97039AIRF6662DirectFET Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free VDSS VGS RDS(on) Low Profile (

 8.3. Size:247K  infineon
 irf6662pbf irf6662trpbf.pdf

IRF6668 IRF6668

PD - 97243AIRF6662PbFIRF6662TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified) RoHs Compliant RDS(on) VDSS VGS Lead-Free (Qualified up to 260C Reflow)17.5m@ 10V100V max 20V max Application Specific MOSFETsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ideal for High Performance Isolated ConverterPrimary Switch Socket22nC 6.8nC 1.2nC 50nC 11nC

 8.4. Size:233K  infineon
 irf6665pbf irf6665trpbf.pdf

IRF6668 IRF6668

PD - 97230AIRF6665PbFDIGITAL AUDIO MOSFETIRF6665TRPbFKey ParametersFeaturesVDS100 V Latest MOSFET Silicon technology Key parameters optimized for Class-D audio amplifierRDS(on) typ. @ VGS = 10V 53 m: applicationsQg typ.8.7 nC Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiency RG(int) typ.1.9 Low Qrr for better THD

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: MP10N60EIS | NTJS4405NT1 | HUF76432P3 | QM6014D | IRFP3207Z

 

 
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