IRF6668 Specs and Replacement
Type Designator: IRF6668
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: DIRECTFET
IRF6668 substitution
- MOSFET ⓘ Cross-Reference Search
IRF6668 datasheet
irf6668pbf irf6668trpbf.pdf
PD - 97232A IRF6668PbF IRF6668TRPbF DirectFET Power MOSFET l RoHs Compliant Typical values (unless otherwise specified) l Lead-Free (Qualified up to 260 C Reflow) RDS(on) VDSS VGS l Application Specific MOSFETs 12m @ 10V l Ideal for High Performance Isolated Converter 80V max 20V max Primary Switch Socket Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for Synchronous... See More ⇒
irf6662pbf irf6662trpbf.pdf
PD - 97243A IRF6662PbF IRF6662TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) RoHs Compliant RDS(on) VDSS VGS Lead-Free (Qualified up to 260 C Reflow) 17.5m @ 10V 100V max 20V max Application Specific MOSFETs Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ideal for High Performance Isolated Converter Primary Switch Socket 22nC 6.8nC 1.2nC 50nC 11nC... See More ⇒
irf6665pbf irf6665trpbf.pdf
PD - 97230A IRF6665PbF DIGITAL AUDIO MOSFET IRF6665TRPbF Key Parameters Features VDS 100 V Latest MOSFET Silicon technology Key parameters optimized for Class-D audio amplifier RDS(on) typ. @ VGS = 10V 53 m applications Qg typ. 8.7 nC Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiency RG(int) typ. 1.9 Low Qrr for better THD... See More ⇒
Detailed specifications: IRF6643, IRF6644, IRF6645, IRF6646, IRF6648, IRF6655, IRF6662, IRF6665, STP80NF70, IRF6674, IRF6678, IRF6691, IRF6706S2, IRF6708S2, IRF6709S2, IRF6710S2, IRF6711S
Keywords - IRF6668 MOSFET specs
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