All MOSFET. IRF6729M Datasheet

 

IRF6729M Datasheet and Replacement


   Type Designator: IRF6729M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.35 V
   |Id| ⓘ - Maximum Drain Current: 31 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 42 nC
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 1360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: DIRECTFET
 

 IRF6729M substitution

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IRF6729M Datasheet (PDF)

 ..1. Size:241K  international rectifier
 irf6729mpbf.pdf pdf_icon

IRF6729M

PD - 96229IRF6729MPbFIRF6729MTRPbFHEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified)l RoHs Compliant and Halogen-Free VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode30V max 20V max 1.4m@ 10V 2.2m@ 4.5Vl Low Profile (

 8.1. Size:265K  1
 irf6723m2d.pdf pdf_icon

IRF6729M

PD - 97441IRF6723M2DTRPbFIRF6723M2DTR1PbFApplicationsl Dual Common Drain Control MOSFETs forDirectFET Power MOSFET Multiphase DC-DC Converters Typical values (unless otherwise specified)FeaturesVDSS VGS RDS(on) RDS(on) l Replaces Two Discrete MOSFETs30V max 20V max 5.2m@ 10V 8.6m@ 4.5Vl Optimized for High Frequency Switchingl Low Profile (

 8.2. Size:259K  international rectifier
 irf6722mpbf irf6722mtrpbf.pdf pdf_icon

IRF6729M

PD - 96136IRF6722MPbFIRF6722MTRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Low Profile (

 8.3. Size:255K  international rectifier
 irf6725mpbf.pdf pdf_icon

IRF6729M

PD - 96120AIRF6725MPbFIRF6725MTRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant and Halogen Free VDSS VGS RDS(on) RDS(on) l Low Profile (

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History: 2SK3658 | IRF6726M

Keywords - IRF6729M MOSFET datasheet

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