IRF7607 Datasheet and Replacement
Type Designator: IRF7607
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SO8
IRF7607 substitution
IRF7607 Datasheet (PDF)
irf7607.pdf
PD - 93845PROVISIONALIRF7607HEXFET Power MOSFET Trench TechnologyAA1 8 Ultra Low On-ResistanceS DVDSS = 20V N-Channel MOSFET2 7S D Very Small SOIC Package3 6S D Low Profile (
irf7607pbf.pdf
PD - 95698IRF7607PbFHEXFET Power MOSFETl Trench TechnologyAA1 8l Ultra Low On-ResistanceS DVDSS = 20Vl N-Channel MOSFET2 7S Dl Very Small SOIC Package3 6S Dl Low Profile (
irf7603pbf.pdf
PD- 95347IRF7603PbF Lead-Freewww.irf.com 102/22/05IRF7603PbF2 www.irf.comIRF7603PbFwww.irf.com 3IRF7603PbF4 www.irf.comIRF7603PbFwww.irf.com 5IRF7603PbF6 www.irf.comIRF7603PbFMicro8 Package OutlineDimensions are shown in milimeters (inches)LEAD ASSIGNMENTS INCHES MILLIMETERSD DIM MIN MAX MIN MAX3- B -D D D D D1 D1 D2 D2A .036 .044 0.91
irf7601.pdf
PD - 9.1261DIRF7601HEXFET Power MOSFET Generation V TechnologyAA Ultra Low On-Resistance1 8S D N-Channel MOSFETVDSS = 20V2 7S D Very Small SOIC Package3 6 Low Profile (
Datasheet: IRF7478 , IRF7478Q , IRF7488 , IRF7490 , IRF7492 , IRF7493 , IRF7494 , IRF7495 , IRF3710 , IRF7665S2 , IRF7805 , IRF7749L2 , IRF7759L2 , IRF7769L2 , IRF7779L2 , IRF7799L2 , IRF7805A .
Keywords - IRF7607 MOSFET datasheet
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