IRF7799L2 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF7799L2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 4.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 6.6 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 110 nC
trⓘ - Rise Time: 33.5 nS
Cossⓘ - Output Capacitance: 606 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: DIRECTFET
IRF7799L2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF7799L2 Datasheet (PDF)
irf7799l2pbf.pdf
IRF7799L2PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)VDSS VGS RDS(on) l Ideal for High Performance Isolated Converter250V min 30V max 32m@ 10V Primary Switch SocketQg tot Qgd Vgs(th) l Optimized for Synchronous Rectificationl Low Conduction Losses110nC 39nC 4.0V
auirf7799l2.pdf
PD - 96421AUTOMOTIVE GRADEAUIRF7799L2TRAUIRF7799L2TR1Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS250V Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.32mother Heavy Load Applications Exceptionally Small Footprint and Low Profilemax. 38m High Power DensityID (Silicon Limited)35A Low Parasitic Parameters
auirf7799l2tr.pdf
AUTOMOTIVE GRADE AUIRF7799L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 250V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 32m Exceptionally Small Footprint and Low Profile max. 38m High Power Density ID (Silicon Limited) 35A Low Parasitic Parameters Qg (typica
irf7752g.pdf
PD- 96151AIRF7752GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel Dual N-Channel MOSFETVDSS RDS(on) max IDl Very Small SOIC Package30V 0.030@VGS = 10V 4.6Al Low Profile (
irf7750g.pdf
PD-96144AIRF7750GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel Dual P-Channel MOSFETl Very Small SOIC PackageVDSS = -20Vl Low Profile (
irf7759l2tr1pbf irf7759l2trpbf.pdf
PD - 96283IRF7759L2TRPbFIRF7759L2TR1PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)l Ideal for High Performance Isolated Converter VDSS VGS RDS(on) Primary Switch Socket75V min 20V max 1.8m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Cond
irf7701.pdf
PD - 93940IRF7701HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET0.011@VGS = -4.5V -10A Very Small SOIC Package-12V 0.015@VGS = -2.5V -8.5A Low Profile (
irf7705gpbf.pdf
PD- 96142AIRF7705GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETVDSS RDS(on) max (mW) IDl Very Small SOIC Package-30V 18 @VGS = -10V -8.0Al Low Profile (
irf7726.pdf
PD -94064IRF7726HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -30V 0.026@VGS = -10V -7.0A Very Small SOIC Package0.040@VGS = -4.5V -6.0A Low Profile (
irf7705pbf.pdf
PD-96022AIRF7705PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 18 @VGS = -10V -8.0Al Very Small SOIC Package 30 @VGS = -4.5V -6.0Al Low Profile (
irf7752.pdf
PD -94030AIRF7752HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID Dual N-Channel MOSFET30V 0.030@VGS = 10V 4.6A Very Small SOIC Package0.036@VGS = 4.5V 3.9A Low Profile (
irf7704.pdf
PD- 94160IRF7704HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) P-Channel MOSFET-40V 46@VGS = -10V -4.6A Very Small SOIC Package74@VGS = -4.5V -3.7A Low Profile (
irf7749l1.pdf
IRF7749L1TRPbFApplicationsDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow) VDSS VGS RDS(on) l Ideal for High Performance Isolated Converter60V min 20V max 1.1m@ 10V Primary Switch Socketl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Conduction Loss
irf7705.pdf
PD - 94001AIRF7705HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) P-Channel MOSFET-30V 18 @VGS = -10V -8.0A Very Small SOIC Package 30 @VGS = -4.5V -6.0A Low Profile (
auirf7759l2.pdf
PD - 96426AUTOMOTIVE GRADEAUIRF7759L2TRAUIRF7759L2TR1 Advanced Process TechnologyAutomotive DirectFET Power MOSFET Optimized for Automotive Motor Drive, DC-DC andV(BR)DSS75Vother Heavy Load Applications Exceptionally Small Footprint and Low ProfileRDS(on) typ.1.8m High Power Densitymax. 2.3m Low Parasitic Parameters Dual Sided Cooling
irf7754.pdf
PD - 94224IRF7754HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -12V 25m@VGS = -4.5V -5.4A Very Small SOIC Package34m@VGS = -2.5V -4.6A Low Profile (
irf7702.pdf
PD - 93849CPROVISIONALIRF7702HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID -1.8V Rated0.014@VGS = -4.5V -8.0A P-Channel MOSFET-12V 0.019@VGS = -2.5V -7.0A Very Small SOIC Package0.027@VGS = -1.8V -5.8A Low Profile (
irf7756.pdf
PD -94159IRF7756HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID Dual P-Channel MOSFET -12V 0.040@VGS = -4.5V 4.3A Very Small SOIC Package0.058@VGS = -2.5V 3.4A Low Profile (
irf7703.pdf
PD - 94221 BIRF7703HEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-40V 28@VGS = -10V -6.0Al Very Small SOIC Package45@VGS = -4.5V -4.8Al Low Profile (
auirf7738l2tr.pdf
PD - 96333AAUIRF7738L2TRAUTOMOTIVE GRADEAUIRF7738L2TR1 Automotive DirectFET Power MOSFET V(BR)DSS 40V Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ.1.2mother Heavy Load Applicationsmax. 1.6m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited)184A Low Parasitic Parame
irf7751.pdf
PD - 94002IRF7751HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID Dual P-Channel MOSFET-30V 35m@VGS = -10V -4.5A Very Small SOIC Package55m@VGS = -4.5V -3.8A Low Profile (
irf7706gpbf.pdf
PD-96143AIRF7706GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETVDSS RDS(on) max IDl Very Small SOIC Package -30V 22m@VGS = -10V -7.0Al Low Profile (
irf7755gpbf.pdf
PD- 96150AIRF7755GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl Dual P-Channel MOSFET -20V 51m@VGS = -4.5V -3.7Al Very Small SOIC Package86m@VGS = -2.5V -2.8Al Low Profile (
irf7701gpbf.pdf
PD - 96146AIRF7701GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFET VDSS RDS(on) max IDl Very Small SOIC Package0.011@VGS = -4.5V -10Al Low Profile (
irf7726pbf.pdf
PD -95992IRF7726PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETVDSS RDS(on) max IDl Very Small SOIC Package -30V 0.026@VGS = -10V -7.0Al Low Profile (
irf7707.pdf
PD -93996IRF7707HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -20V 22m@VGS = -4.5V -7.0A Very Small SOIC Package33m@VGS = -2.5V -6.0A Low Profile (
irf7702gpbf.pdf
PD- 96147IRF7702GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl -1.8V Rated0.014@VGS = -4.5V -8.0Al P-Channel MOSFET-12V 0.019@VGS = -2.5V -7.0Al Very Small SOIC Package0.027@VGS = -1.8V -5.8Al Low Profile (
irf7749l2tr1pbf irf7749l2trpbf.pdf
PD - 97434IRF7749L2TRPbFIRF7749L2TR1PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free l Lead-Free (Qualified up to 260C Reflow) Typical values (unless otherwise specified)l Ideal for High Performance Isolated ConverterVDSS VGS RDS(on) Primary Switch Socket60V min 20V max 1.1m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Condu
irf7702pbf.pdf
PD-96027IRF7702PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl -1.8V Rated0.014@VGS = -4.5V -8.0Al P-Channel MOSFET-12V 0.019@VGS = -2.5V -7.0Al Very Small SOIC Package0.027@VGS = -1.8V -5.8Al Low Profile (
irf7703pbf.pdf
PD-96026AIRF7703PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-40V 28@VGS = -10V -6.0Al Very Small SOIC Package45@VGS = -4.5V -4.8Al Low Profile (
auirf7769l2.pdf
AUTOMOTIVE GRADEAUIRF7769L2TRAutomotive DirectFET Power MOSFET V(BR)DSS Advanced Process Technology 100V Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.2.8mother Heavy Load Applications Exceptionally Small Footprint and Low Profile max. 3.5m High Power DensityID (Silicon Limited)124A Low Parasitic ParametersQg 200nC Dual Sid
irf7769l2tr1pbf irf7769l2trpbf.pdf
PD - 97413BIRF7769L2TRPbFIRF7769L2TR1PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)l Ideal for High Performance Isolated ConverterVDSS VGS RDS(on) Primary Switch Socket100V min 20V max 2.8m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Co
irf7700gpbf.pdf
PD - 96155AIRF7700GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET-20V 0.015@VGS = -4.5V -8.6Al Very Small SOIC Package0.024@VGS = -2.5V -7.3Al Low Profile (
irf7754gpbf.pdf
PD- 96152AIRF7754GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET -12V 25m@VGS = -4.5V -5.4Al Very Small SOIC Package34m@VGS = -2.5V -4.6Al Low Profile (
auirf7736m2tr1.pdf
PD - 96316BAUIRF7736M2TRAUTOMOTIVE GRADEAUIRF7736M2TR1 Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS40V Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.2.5mother Heavy Load Applications Exceptionally Small Footprint and Low Profile max. 3.0m High Power DensityID (Silicon Limited)108A Low Parasitic Param
irf7739l2.pdf
IRF7739L2TRPbFIRF7739L2TR1PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)l Ideal for High Performance Isolated Converter VDSS VGS RDS(on) Primary Switch Socket40V min 20V max 0.70m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Conduction Loss
irf7700.pdf
PD - 93894AIRF7700HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET-20V 0.015@VGS = -4.5V -8.6A Very Small SOIC Package0.024@VGS = -2.5V -7.3A Low Profile (
irf7769l1.pdf
IRF7769L1TRPbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow) l Ideal for High Performance Isolated ConverterVDSS VGS RDS(on) Primary Switch Socket100V min 20V max 2.8m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Conduction Losses200nC 110
irf7703gpbf.pdf
PD- 96148AIRF7703GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETVDSS RDS(on) max (mW) IDl Very Small SOIC Package-40V 28@VGS = -10V -6.0Al Low Profile (
irf7756gpbf.pdf
PD- 96153AIRF7756GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl Dual P-Channel MOSFET -12V 0.040@VGS = -4.5V -4.3Al Very Small SOIC Package0.058@VGS = -2.5V -3.4Al Low Profile (
irf7739l1.pdf
IRF7739L1TRPbFApplicationsDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant, Halogen Free l Lead-Free (Qualified up to 260C Reflow) VDSS VGS RDS(on) l Ideal for High Performance Isolated Converter40V min 20V max 0.70m@ 10VPrimary Switch SocketQg tot Qgd Vgs(th) l Optimized for Synchronous Rectification220nC 81nC 2.8Vl Low
irf7748l1.pdf
IRF7748L1TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) Applications VDSS VGS RDS(on) RoHS Compliant, Halogen Free Lead-Free (Qualified up to 260C Reflow) 60V min 20V max 1.7m@ 10V Ideal for High Performance Isolated Converter Qg tot Qgd Vgs(th) Primary Switch Socket Optimized for Synchronous Recti
irf7704pbf.pdf
PD- 96025AIRF7704PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-40V 46@VGS = -10V -4.6Al Very Small SOIC Package74@VGS = -4.5V -3.7Al Low Profile (
irf7755.pdf
PD -93995AIRF7755HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID Dual P-Channel MOSFET -20V 51m@VGS = -4.5V -3.7A Very Small SOIC Package86m@VGS = -2.5V -2.8A Low Profile (
auirf7732s2tr.pdf
AUIRF7732S2PbFAUIRF7732S2TR/TR1DirectFET Power MOSFET Advanced Process Technology Optimized for Automotive DC-DC, Motor Drive and40VV(BR)DSS other Heavy Load Applications5.5mRDS(on) typ. Exceptionally Small Footprint and Low Profile High Power Density max. 6.95m Low Parasitic Parameters55AID (Silicon Limited) Dual Sided Cooling30nCQg
irf7750.pdf
PD - 93848AIRF7750HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFETVDSS = -20V Very Small SOIC Package Low Profile (
irf7757.pdf
PD - 94174IRF7757HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) Dual N-Channel MOSFET20V 35@VGS = 4.5V 4.8A Very Small SOIC Package40@VGS = 2.5V 3.8A Low Profile (
irf7779l2tr1pbf irf7779l2trpbf.pdf
PD - 97435IRF7779L2TRPbFIRF7779L2TR1PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free l Lead-Free (Qualified up to 260C Reflow) Typical values (unless otherwise specified)l Ideal for High Performance Isolated ConverterVDSS VGS RDS(on) Primary Switch Socket150V min 20V max 9.0m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Cond
irf7706.pdf
PD -94003IRF7706HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -30V 22m@VGS = -10V -7.0A Very Small SOIC Package36m@VGS = -4.5V -5.6A Low Profile (
auirf7737l2tr1.pdf
PD - 96315CAUIRF7737L2TRAUTOMOTIVE GRADEAUIRF7737L2TR1 Automotive DirectFET Power MOSFET Advanced Process TechnologyV(BR)DSS40V Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.1.5mother Heavy Load Applications Exceptionally Small Footprint and Low Profilemax. 1.9m High Power DensityID (Silicon Limited)156A Low Parasitic Par
irf7706pbf.pdf
PD-96023AIRF7706PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET -30V 22m@VGS = -10V -7.0Al Very Small SOIC Package36m@VGS = -4.5V -5.6Al Low Profile (
auirf7739l2tr.pdf
PD - 97442BAUIRF7739L2TRAUTOMOTIVE GRADEAUIRF7739L2TR1Automotive DirectFET Power MOSFET FeaturesAdvanced Process Technology V(BR)DSS40VOptimized for Automotive Motor Drive, DC-DC andRDS(on) typ.700 other Heavy Load Applicationsmax. 1000Exceptionally Small Footprint and Low ProfileHigh Power DensityID (Silicon Limit
irf7704gpbf.pdf
PD-96149IRF7704GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-40V 46@VGS = -10V -4.6Al Very Small SOIC Package74@VGS = -4.5V -3.7Al Low Profile (
irf7751gpbf.pdf
PD - 96145AIRF7751GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel Dual P-Channel MOSFETVDSS RDS(on) max IDl Very Small SOIC Package-30V 35m@VGS = -10V -4.5Al Low Profile (
auirf7749l2tr.pdf
AUTOMOTIVE GRADE AUIRF7749L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 60V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.1m other Heavy Load Applications Exceptionally Small Footprint and Low Profile max. 1.5m High Power Density ID (Silicon Limited) 345A Low Parasitic Parame
auirf7759l2tr.pdf
AUTOMOTIVE GRADE AUIRF7759L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 75V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 1.8m Exceptionally Small Footprint and Low Profile max. 2.3m High Power Density ID (Silicon Limited) 160A Low Parasitic Parameters Qg (typi
auirf7738l2tr.pdf
AUTOMOTIVE GRADE AUIRF7738L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 1.2m Exceptionally Small Footprint and Low Profile max. 1.6m High Power Density ID (Silicon Limited) 184A Low Parasitic Parameters Qg (typi
irf7749l1trpbf.pdf
IRF7749L1TRPbF DirectFET N-Channel Power MOSFET IR MOSFET-DirectFET V 60V DSS IRF7749L1TRPbFR typ. DS(on) 1.1m @ V 10VGS = R max Quality Requirement Category: Industrial DS(on) 1.5m @ V = 10V GSID (Silicon Limited) 345A ID (Package Limited) 375A Applications RoHS Compliant, Halogen Free Lead-Free (Qualified up to 260
irf7779l2pbf.pdf
IRF7779L2PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)l Ideal for High Performance Isolated ConverterVDSS VGS RDS(on) Primary Switch Socket150V min 20V max 9.0m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Conduction Losses97nC 33nC 4.0V
irf7726pbf.pdf
PD -95992IRF7726PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETVDSS RDS(on) max IDl Very Small SOIC Package -30V 0.026@VGS = -10V -7.0Al Low Profile (
auirf7769l2tr.pdf
AUTOMOTIVE GRADE AUIRF7769L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 100V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 2.8m Exceptionally Small Footprint and Low Profile max. 3.5m High Power Density ID (Silicon Limited) 124A Low Parasitic Parameters Qg (typ
auirf7734m2 auirf7734m2tr.pdf
AUTOMOTIVE GRADE AUIRF7734M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 3.8m Exceptionally Small Footprint and Low Profile max. 4.9m High Power Density ID (Silicon Limited) 72A Low Parasitic Parameters Qg (typic
auirf7737l2tr auirf7737l2tr1.pdf
PD - 96315CAUIRF7737L2TRAUTOMOTIVE GRADEAUIRF7737L2TR1 Automotive DirectFET Power MOSFET Advanced Process TechnologyV(BR)DSS40V Optimized for Automotive Motor Drive, DC-DC andRDS(on) typ.1.5mother Heavy Load Applications Exceptionally Small Footprint and Low Profilemax. 1.9m High Power DensityID (Silicon Limited)156A Low Parasitic Par
auirf7732s2tr.pdf
AUTOMOTIVE GRADE AUIRF7732S2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 5.5m Exceptionally Small Footprint and Low Profile max. 6.95m High Power Density ID (Silicon Limited) 55A Low Parasitic Parameters Qg (ty
auirf7736m2tr.pdf
AUTOMOTIVE GRADE AUIRF7736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 2.5m Exceptionally Small Footprint and Low Profile max. 3.0m High Power Density ID (Silicon Limited) 108A Low Parasitic Parameters Qg (typi
irf7759l2pbf.pdf
IRF7759L2PbFDirectFET Power MOSFET l RoHS Compliant, Halogen Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)l Ideal for High Performance Isolated Converter VDSS VGS RDS(on) Primary Switch Socket75V min 20V max 1.8m@ 10Vl Optimized for Synchronous RectificationQg tot Qgd Vgs(th) l Low Conduction Losses200nC 62nC 3.0V
auirf7739l2tr.pdf
AUTOMOTIVE GRADE AUIRF7739L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications RDS(on) typ. 700 Exceptionally Small Footprint and Low Profile max. 1000 High Power Density ID (Silicon Limited) 270A Low Parasitic Parameters Qg (t
irf7751gtr.pdf
IRF7751GTRwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs0.036 at VGS = - 10 V - 5.2- 30RoHS0.055 at VGS = - 4.5 V - 4.2COMPLIANTAPPLICATIONS Load Switch Battery SwitchS1 S2TSSOP-8G1 G2D1 1 D28S1 2 S27S1 3 S26G1 4 G25Top ViewD1 D2P-Chan
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2SK4210
History: 2SK4210
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918