IRF7807A Specs and Replacement

Type Designator: IRF7807A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SO8

IRF7807A substitution

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IRF7807A datasheet

 0.1. Size:257K  international rectifier
irf7807trpbf-1 irf7807atrpbf-1.pdf pdf_icon

IRF7807A

IRF7807TRPbF-1 IRF7807ATRPbF-1 HEXFET Chip-Set for DC-DC Converters A VDS 30 V 1 8 S D RDS(on) max 2 7 S D 25 m (@V = 4.5V) GS 3 6 S D Qg (typical) 12 nC 4 5 G D ID 8.3 A (@T = 25 C) Top View SO-8 A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Co... See More ⇒

 0.2. Size:823K  cn vbsemi
irf7807atr.pdf pdf_icon

IRF7807A

IRF7807ATR www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch ... See More ⇒

 7.1. Size:165K  international rectifier
irf7807d1.pdf pdf_icon

IRF7807A

PD- 93761 IRF7807D1 FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET 1 8 A/S K/D and Schottky Diode 2 7 A/S K/D Ideal for Synchronous Rectifiers in DC-DC 3 6 Converters Up to 5A Output A/S K/D Low Conduction Losses 4 5 G K/D Low Switching Losses D Low Vf Schottky Rectifier SO-8 Top View Description The FETKY family of Co-Pac... See More ⇒

 7.2. Size:239K  international rectifier
irf7807.pdf pdf_icon

IRF7807A

PD 91747C IRF7807/IRF7807A HEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETs A Ideal for Mobile DC-DC Converters 1 8 S D Low Conduction Losses 2 7 S D Low Switching Losses 3 6 S D Description 4 5 G D These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented SO-8 Top View balance of on-resistanc... See More ⇒

Detailed specifications: IRF7759L2, IRF7769L2, IRF7779L2, IRF7799L2, IRF7805A, IRF7805Q, IRF7805Z, IRF7805ZG, 2SK3878, IRF7807D1, IRF7807D2, IRF7807V, IRF7807VD1, IRF7807VD2, IRF7807Z, IRF7809AV, IRF7811AV

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