All MOSFET. IRF8010S Datasheet

 

IRF8010S MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF8010S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 81 nC
   trⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO263

 IRF8010S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF8010S Datasheet (PDF)

 ..1. Size:224K  international rectifier
 irf8010spbf.pdf

IRF8010S IRF8010S

PD - 95433IRF8010SPbFSMPS MOSFETIRF8010LPbFApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersl UPS and Motor ControlVDSS RDS(on) max IDl Lead-Free100V 15m 80ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-262D2Pakl Fully C

 ..2. Size:224K  international rectifier
 irf8010lpbf irf8010spbf.pdf

IRF8010S IRF8010S

PD - 95433IRF8010SPbFSMPS MOSFETIRF8010LPbFApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersl UPS and Motor ControlVDSS RDS(on) max IDl Lead-Free100V 15m 80ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-262D2Pakl Fully C

 ..3. Size:224K  infineon
 irf8010spbf irf8010lpbf.pdf

IRF8010S IRF8010S

PD - 95433IRF8010SPbFSMPS MOSFETIRF8010LPbFApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersl UPS and Motor ControlVDSS RDS(on) max IDl Lead-Free100V 15m 80ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-262D2Pakl Fully C

 ..4. Size:258K  inchange semiconductor
 irf8010s.pdf

IRF8010S IRF8010S

Isc N-Channel MOSFET Transistor IRF8010SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 0.1. Size:1397K  cn vbsemi
 irf8010sp.pdf

IRF8010S IRF8010S

IRF8010SPwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.010 at VGS = 10 V100100 Compliant to RoHS Directive 2002/95/EC0.023 at VGS = 4.5 V85D TO-263G G D S Top ViewS N-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n

 7.1. Size:494K  international rectifier
 irf8010.pdf

IRF8010S IRF8010S

PD - 94497SMPS MOSFETIRF8010ApplicationsHEXFET Power MOSFET High frequency DC-DC converters UPS and Motor ControlVDSS RDS(on) max IDBenefits100V 15m 80A Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand Current Typica

 7.2. Size:133K  international rectifier
 irf8010pbf.pdf

IRF8010S IRF8010S

PD - 95505IRF8010PbFSMPS MOSFETApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersl UPS and Motor ControlVDSS RDS(on) max IDl Lead-Free100V 15m 80ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche Voltag

 7.3. Size:133K  infineon
 irf8010pbf.pdf

IRF8010S IRF8010S

PD - 95505IRF8010PbFSMPS MOSFETApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersl UPS and Motor ControlVDSS RDS(on) max IDl Lead-Free100V 15m 80ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche Voltag

 7.4. Size:245K  inchange semiconductor
 irf8010.pdf

IRF8010S IRF8010S

isc N-Channel MOSFET Transistor IRF8010IIRF8010FEATURESStatic drain-source on-resistance:RDS(on) 15mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 7.5. Size:256K  inchange semiconductor
 irf8010l.pdf

IRF8010S IRF8010S

Isc N-Channel MOSFET Transistor IRF8010LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK4210

 

 
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