All MOSFET. IRF8113G Datasheet

 

IRF8113G Datasheet and Replacement


   Type Designator: IRF8113G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.9 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
   Package: SO8
 

 IRF8113G substitution

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IRF8113G Datasheet (PDF)

 ..1. Size:286K  international rectifier
irf8113gpbf.pdf pdf_icon

IRF8113G

PD - 96251IRF8113GPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg Typ.l Synchronous MOSFET for Notebook5.6m @VGS = 10V30V 24nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking SystemsAA1 8l Lead-Free S D2 7l Halogen-FreeS D3 6S DBenefits4 5G Dl Very Low RDS(on) at 4.5V VGSl Low Gate Charge SO-8Top

 7.1. Size:218K  international rectifier
irf8113pbf.pdf pdf_icon

IRF8113G

PD - 95138BIRF8113PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg Typ.l Synchronous MOSFET for Notebook5.6m @VGS = 10V30V 24nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters inNetworking SystemsAA1 8S D2 7Benefits S Dl Very Low RDS(on) at 4.5V VGS 3 6S Dl Low Gate Charge4 5G Dl Fully Characterized Avalanche Voltag

 7.2. Size:207K  international rectifier
irf8113.pdf pdf_icon

IRF8113G

PD - 94637AIRF8113HEXFET Power MOSFETApplicationsVDSS RDS(on) maxQg Typ.l Synchronous MOSFET for Notebook5.6m:@VGS = 10V30V 24nCProcessor Powerl Synchronous Rectifier MOSFET forIsolated DC-DC Converters in NetworkingAA1 8Systems S DBenefits2 7S Dl Very Low RDS(on) at 4.5V VGS3 6S Dl Low Gate Charge45G Dl Fully Characterized Avalanche Voltage

 7.3. Size:249K  international rectifier
irf8113pbf-1.pdf pdf_icon

IRF8113G

IRF8113PbF-1HEXFET Power MOSFETAVDS 30 VA1 8S DRDS(on) max 5.62 7S D(@V = 10V)GSm3 6RDS(on) max S D6.8(@V = 4.5V)GS 4 5G DQg (typical) 24 nCSO-8ID Top View17.2 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoH

Datasheet: IRF7853 , IRF7854 , IRF7855 , IRF7862 , IRF8010 , IRF8010L , IRF8010S , IRF8113 , 20N50 , IRF8252 , IRF8302M , IRF8304M , IRF8306M , IRF8308M , IRF8327S , IRF8707 , IRF8707G .

History: PSMN4R8-100PSE | HSP0048

Keywords - IRF8113G MOSFET datasheet

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