IRF8113G PDF and Equivalents Search

 

IRF8113G Specs and Replacement

Type Designator: IRF8113G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.9 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm

Package: SO8

IRF8113G substitution

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IRF8113G datasheet

 ..1. Size:286K  international rectifier
 irf8113gpbf.pdf pdf_icon

IRF8113G

PD - 96251 IRF8113GPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg Typ. l Synchronous MOSFET for Notebook 5.6m @VGS = 10V 30V 24nC Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 l Lead-Free S D 2 7 l Halogen-Free S D 3 6 S D Benefits 4 5 G D l Very Low RDS(on) at 4.5V VGS l Low Gate Charge SO-8 Top... See More ⇒

 7.1. Size:218K  international rectifier
 irf8113pbf.pdf pdf_icon

IRF8113G

PD - 95138B IRF8113PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg Typ. l Synchronous MOSFET for Notebook 5.6m @VGS = 10V 30V 24nC Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D 2 7 Benefits S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Low Gate Charge 4 5 G D l Fully Characterized Avalanche Voltag... See More ⇒

 7.2. Size:207K  international rectifier
 irf8113.pdf pdf_icon

IRF8113G

PD - 94637A IRF8113 HEXFET Power MOSFET Applications VDSS RDS(on) max Qg Typ. l Synchronous MOSFET for Notebook 5.6m @VGS = 10V 30V 24nC Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking A A 1 8 Systems S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Low Gate Charge 4 5 G D l Fully Characterized Avalanche Voltage... See More ⇒

 7.3. Size:249K  international rectifier
 irf8113pbf-1.pdf pdf_icon

IRF8113G

IRF8113PbF-1 HEXFET Power MOSFET A VDS 30 V A 1 8 S D RDS(on) max 5.6 2 7 S D (@V = 10V) GS m 3 6 RDS(on) max S D 6.8 (@V = 4.5V) GS 4 5 G D Qg (typical) 24 nC SO-8 ID Top View 17.2 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoH... See More ⇒

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Detailed specifications: IRF7853, IRF7854, IRF7855, IRF7862, IRF8010, IRF8010L, IRF8010S, IRF8113, STP80NF70, IRF8252, IRF8302M, IRF8304M, IRF8306M, IRF8308M, IRF8327S, IRF8707, IRF8707G

Keywords - IRF8113G MOSFET specs

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