IRFB3207 PDF and Equivalents Search

 

IRFB3207 Specs and Replacement

Type Designator: IRFB3207

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 330 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 170 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 710 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO220AB

IRFB3207 substitution

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IRFB3207 datasheet

 ..1. Size:379K  international rectifier
irfb3207 irfs3207 irfsl3207.pdf pdf_icon

IRFB3207

PD - 96893C IRFB3207 IRFS3207 IRFSL3207 Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching 3.6m RDS(on) typ. l Hard Switched and High Frequency Circuits G Benefits max. 4.5m l Worldwide Best RDS(on) in TO-220 S ID 180A l Improved Gate, Avalanche and Dynamic dV/dt Ruggedn... See More ⇒

 ..2. Size:387K  international rectifier
irfb3207pbf.pdf pdf_icon

IRFB3207

PD - 95708D IRFB3207PbF IRFS3207PbF IRFSL3207PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 3.6m G max. 4.5m Benefits S ID 170A l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized ... See More ⇒

 ..3. Size:246K  inchange semiconductor
irfb3207.pdf pdf_icon

IRFB3207

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3207 IIRFB3207 FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMU... See More ⇒

 0.1. Size:282K  international rectifier
auirfb3207.pdf pdf_icon

IRFB3207

PD - 96322 AUTOMOTIVE GRADE AUIRFB3207 HEXFET Power MOSFET Features D V(BR)DSS 75V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 3.6m l 175 C Operating Temperature max. 4.5m G l Fast Switching ID (Silicon Limited) 170A l Repetitive Avalanche Allowed up to Tjmax S l Lead-Free, RoHS Compliant ID (Package Limited) 75A l Automotive Qualified * ... See More ⇒

Detailed specifications: IRFB3004G, IRFB3006, IRFB3006G, IRFB3077, IRFB3077G, IRFB31N20D, IRFB3206, IRFB3206G, 7N60, IRFB3207Z, IRFB3207ZG, IRFB3256, IRFB3306, IRFB3306G, IRFB3307, IRFB3307Z, IRFB3307ZG

Keywords - IRFB3207 MOSFET specs

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