BF966S Datasheet and Replacement

   Type Designator: BF966S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8.5 V
   |Id|ⓘ - Maximum Drain Current: 0.03 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 2.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
   Package: MACROX
      - MOSFET Cross-Reference Search