IRFB4321 Datasheet and Replacement

PD - 97103BIRFB4321PbFHEXFET Power MOSFETApplicationsl Motion Control Applicationsl High Efficiency Synchronous Rectification in SMPSVDSS 150Vl Uninterruptible Power SupplyRDS(on) typ.12m:l Hard Switched and High Frequency Circuitsmax. 15m:BenefitsID 85Al Low RDSON Reduces Lossesl Low Gate Charge Improves the Switching PerformanceDDl Improved Diode Re

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4321PBFFEATURESWith low gate drive requirementsImproved diode recovery improves switchingEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

isc N-Channel MOSFET Transistor IRFB4321IIRFB4321FEATURESStatic drain-source on-resistance:RDS(on) 15mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMUM

PD - 96215IRFB4321GPbFApplicationsHEXFET Power MOSFETl Motion Control ApplicationsVDSS 150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.12ml Hard Switched and High Frequency Circuits max. 15mID 83ABenefitsl Low RDSON Reduces Lossesl Low Gate Charge Improves the Switching DD Performancel Improved Diode Recovery

PD - 96190IRFB4310GPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switchingl Hard Switched and High Frequency Circuits RDS(on) typ. 5.6mG max. 7.0mID 130ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avalanche

PD - 97115DIRFB4310ZPbFIRFS4310ZPbFIRFSL4310ZPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8m:l Uninterruptible Power Supplyl High Speed Power Switching max. 6.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)127A cID (Package Limited)120A SBenefitsl Improved Gate,

PD - 14275DIRFB4310PbFIRFS4310PbFIRFSL4310PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switchingl Hard Switched and High Frequency Circuits RDS(on) typ. 5.6mG max. 7.0mID 130ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

PD - 96189IRFB4310ZGPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8ml Uninterruptible Power Supplyl High Speed Power Switching max. 6.0ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 127A ID (Package Limited) 120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRuggedn

PD - 97099IRFB4332PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min 250 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 Vl Low EPULSE Rating to Reduce Powerm:RDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 120 A and Pass Switch Applications

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4310 IIRFB4310FEATURESStatic drain-source on-resistance:RDS(on) 7.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU

isc N-Channel MOSFET Transistor IRFB4332IIRFB4332FEATURESStatic drain-source on-resistance:RDS(on) 33mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and high repetitive peakcurrent capabilityABSOLUTE MAXIMUM

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4310Z IIRFB4310ZFEATURESStatic drain-source on-resistance:RDS(on) 6.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXI

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4310ZPBFFEATURESWith TO-220 packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM