IRFH5010 MOSFET Datasheet: N-Ch, 100V, 13A. Full specification with pinout and replacement list

IRFH5010 Specs and Replacement

Type Designator: IRFH5010

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 425 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: PQFN5X6

IRFH5010 substitution

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IRFH5010 datasheet

..1. Size:254K international rectifier
irfh5010pbf.pdf pdf_icon

IRFH5010PbF HEXFET Power MOSFET VDS 100 V RDS(on) max 9.0 m (@VGS = 10V) Qg (typical) 67 nC RG (typical) 1.2 ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Features and Benefits Benefits Features Low RDSon (... See More ⇒

0.1. Size:254K 1
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7.1. Size:272K international rectifier
irfh5015pbf.pdf pdf_icon

IRFH5015PbF HEXFET Power MOSFET VDS 150 V RDS(on) max 31 m (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.7 ID PQFN 5X6 mm 44 A (@Tmb = 25 C) Applications Primary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon (... See More ⇒

8.1. Size:260K 1
irfh5020trpbf.pdf pdf_icon

IRFH5020PbF HEXFET Power MOSFET VDS 200 V RDS(on) max 55 m (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.9 ID 34 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses Low The... See More ⇒