IRFH5207 PDF and Equivalents Search

 

IRFH5207 Specs and Replacement

Type Designator: IRFH5207

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 313 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm

Package: PQFN5X6

IRFH5207 substitution

- MOSFET ⓘ Cross-Reference Search

 

IRFH5207 datasheet

 ..1. Size:300K  international rectifier
irfh5207pbf.pdf pdf_icon

IRFH5207

PD -96298 IRFH5207PbF HEXFET Power MOSFET VDS 75 V RDS(on) max 9.6 m (@VGS = 10V) Qg (typical) 39 nC RG (typical) 1.7 ID PQFN 5X6 mm 71 A (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon (... See More ⇒

 7.1. Size:292K  international rectifier
irfh5206pbf.pdf pdf_icon

IRFH5207

PD -97466 IRFH5206PbF HEXFET Power MOSFET VDS 60 V RDS(on) max 6.7 m (@VGS = 10V) Qg (typical) 40 nC RG (typical) 1.7 ID 89 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 7.0m at Vgs=10V) L... See More ⇒

 7.2. Size:252K  international rectifier
irfh5204pbf.pdf pdf_icon

IRFH5207

IRFH5204PbF HEXFET Power MOSFET VDS 40 V RDS(on) max 4.3 m (@VGS = 10V) Qg (typical) 43 nC RG (typical) 1.7 ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon (... See More ⇒

 8.1. Size:210K  international rectifier
irfh5210pbf.pdf pdf_icon

IRFH5207

PD - 97490A IRFH5210PbF HEXFET Power MOSFET VDS 100 V RDS(on) max 14.9 m (@VGS = 10V) Qg (typical) 40 nC RG (typical) 1.7 ID 55 A PQFN 5X6 mm (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon ( 14.9m ... See More ⇒

Detailed specifications: IRFH5020, IRFH5025, IRFH5053, IRFH5104, IRFH5106, IRFH5110, IRFH5204, IRFH5206, AON6380, IRFH5210, IRFH5215, IRFH5220, IRFH5250, IRFH5250D, IRFH5255, IRFH5300, IRFH5301

Keywords - IRFH5207 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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