All MOSFET. IRFH5215 Datasheet

 

IRFH5215 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFH5215

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 3.6 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.058 Ohm

Package: PQFN5X6

IRFH5215 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFH5215 Datasheet (PDF)

1.1. irfh5215pbf.pdf Size:252K _international_rectifier

IRFH5215
IRFH5215

IRFH5215PbF HEXFET® Power MOSFET VDS 150 V RDS(on) max 58 mΩ (@VGS = 10V) Qg (typical) 21 nC RG (typical) 2.3 Ω ID PQFN 5X6 mm 27 A (@Tc(Bottom) = 25°C) Applications • Primary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Features Benefits Low RDSon (< 58 mΩ) Lower Conduction Lo

3.1. irfh5210pbf.pdf Size:256K _international_rectifier

IRFH5215
IRFH5215

IRFH5210PbF HEXFET® Power MOSFET VDS 100 V RDS(on) max 14.9 mΩ (@VGS = 10V) Qg (typical) 40 nC RG (typical) 1.7 Ω ID 55 A PQFN 5X6 mm (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Features Benefits Low RDSon (≤ 14.9mΩ at Vgs = 10V)

4.1. irfh5207pbf.pdf Size:251K _international_rectifier

IRFH5215
IRFH5215

IRFH5207PbF HEXFET® Power MOSFET VDS 75 V RDS(on) max 9.6 mΩ (@VGS = 10V) Qg (typical) 40 nC RG (typical) 1.7 Ω ID PQFN 5X6 mm 71 A (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Features Benefits Low RDSon (< 9.6 mΩ) Lower Conductio

4.2. irfh5250pbf.pdf Size:306K _international_rectifier

IRFH5215
IRFH5215

PD -96265 IRFH5250PbF HEXFET® Power MOSFET VDS 25 V RDS(on) max 1.15 m (@VGS = 10V) Qg (typical) 52 nC RG (typical) 1.3 ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25°C) Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features Low RDSon (<1.15 mΩ) Lower Conduction Losses Low Th

4.3. irfh5250dpbf.pdf Size:261K _international_rectifier

IRFH5215
IRFH5215

IRFH5250DPbF HEXFET® Power MOSFET VDS 25 V RDS(on) max 1.4 mΩ (@VGS = 10V) VSD max 0.6 V (@IS = 5.0A) trr (typical) 27 ns ID PQFN 5X6 mm 100 A (@Tmb = 25°C) Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits Benefits Features Low RDSon (<1.4mΩ) Lower Conduction Losses Schottky Intrinsic Diode with Low Forward Voltage Lower Swi

4.4. irfh5204pbf.pdf Size:252K _international_rectifier

IRFH5215
IRFH5215

IRFH5204PbF HEXFET® Power MOSFET VDS 40 V RDS(on) max 4.3 mΩ (@VGS = 10V) Qg (typical) 43 nC RG (typical) 1.7 Ω ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Features Benefits Low RDSon (< 4.3 mΩ) Lower Conducti

4.5. irfh5220pbf.pdf Size:255K _international_rectifier

IRFH5215
IRFH5215

IRFH5220PbF HEXFET® Power MOSFET VDS 200 V RDS(on) max 99.9 mΩ (@VGS = 10V) Qg (typical) 20 nC RG (typical) 2.3 Ω ID 20 A PQFN 5X6 mm (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses

4.6. irfh5206pbf.pdf Size:253K _international_rectifier

IRFH5215
IRFH5215

IRFH5206PbF HEXFET® Power MOSFET VDS 60 V RDS(on) max 6.7 m (@VGS = 10V) Qg (typical) 40 nC RG (typical) 1.7 ID 89 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon (≤ 7.0mΩ at Vgs=10V) Lower Conduc

4.7. irfh5255pbf.pdf Size:249K _international_rectifier

IRFH5215
IRFH5215

IRFH5255PbF HEXFET® Power MOSFET VDS 25 V RDS(on) max 6.0 mΩ (@VGS = 10V) Qg (typical) 7.0 nC RG (typical) 0.6 Ω ID PQFN 5X6 mm 51 A (@Tc(Bottom) = 25°C) Applications • Control MOSFET for high Frequency Buck Converters Features and Benefits Benefits Features Low Charge (typical 7nC) Lower Switching Losses Low Rg (typical 0.6Ω) Lower Switching Losses Low Thermal Re

Datasheet: IRFH5053 , IRFH5104 , IRFH5106 , IRFH5110 , IRFH5204 , IRFH5206 , IRFH5207 , IRFH5210 , IRF5305 , IRFH5220 , IRFH5250 , IRFH5250D , IRFH5255 , IRFH5300 , IRFH5301 , IRFH5302 , IRFH5302D .

 


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