IRFH5220 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRFH5220
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 3.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 4.7 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0999 Ohm
   Package: PQFN5X6

IRFH5220 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFH5220 Datasheet (PDF)

..1. Size:255K international rectifier
irfh5220pbf.pdf

IRFH5220PbFHEXFET Power MOSFETVDS200 VRDS(on) max 99.9 m(@VGS = 10V)Qg (typical)20nCRG (typical)2.3ID 20 APQFN 5X6 mm(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon Lower Conduction Losses

8.1. Size:210K international rectifier
irfh5210pbf.pdf

PD - 97490AIRFH5210PbFHEXFET Power MOSFETVDS100 VRDS(on) max 14.9 m(@VGS = 10V)Qg (typical)40nCRG (typical)1.7ID 55 APQFN 5X6 mm(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsFeatures BenefitsLow RDSon ( 14.9m

8.2. Size:292K international rectifier
irfh5206pbf.pdf

PD -97466IRFH5206PbFHEXFET Power MOSFETVDS60 VRDS(on) max 6.7 m(@VGS = 10V)Qg (typical) 40nCRG (typical) 1.7ID 89 A(@Tc(Bottom) = 25C) PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 7.0m at Vgs=10V) L

8.3. Size:305K international rectifier
irfh5250pbf.pdf

PD -96265IRFH5250PbFHEXFET Power MOSFETVDS25 VRDS(on) max 1.15 m(@VGS = 10V)Qg (typical)52 nCRG (typical)1.3ID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeaturesLow RDSon (

8.4. Size:298K international rectifier
irfh5255pbf.pdf

PD -96289IRFH5255PbFHEXFET Power MOSFETVDS25 VRDS(on) max 6.0 m(@VGS = 10V)Qg (typical)7.0 nCRG (typical)0.6 ID PQFN 5X6 mm51 A(@Tc(Bottom) = 25C)Applications Control MOSFET for high Frequency Buck ConvertersFeatures and BenefitsBenefitsFeaturesLow Charge (typical 7nC) Lower Switching LossesLow Rg (typical 0.6) Lower Switching Losses

8.5. Size:261K international rectifier
irfh5250dpbf.pdf

IRFH5250DPbFHEXFET Power MOSFETVDS 25 VRDS(on) max 1.4 m(@VGS = 10V)VSD max 0.6 V(@IS = 5.0A)trr (typical) 27 nsID PQFN 5X6 mm100 A(@Tmb = 25C)Applications Synchronous MOSFET for high frequency buck convertersFeatures and BenefitsBenefitsFeaturesLow RDSon (

8.6. Size:252K international rectifier
irfh5215pbf.pdf

IRFH5215PbFHEXFET Power MOSFETVDS150 VRDS(on) max 58 m(@VGS = 10V)Qg (typical)21nCRG (typical)2.3ID PQFN 5X6 mm27 A(@Tc(Bottom) = 25C)Applications Primary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsFeatures BenefitsLow RDSon (

8.7. Size:252K international rectifier
irfh5204pbf.pdf

IRFH5204PbFHEXFET Power MOSFETVDS40 VRDS(on) max 4.3 m(@VGS = 10V)Qg (typical)43nCRG (typical)1.7ID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsFeaturesBenefitsLow RDSon (

8.8. Size:300K international rectifier
irfh5207pbf.pdf

PD -96298IRFH5207PbFHEXFET Power MOSFETVDS75 VRDS(on) max 9.6 m(@VGS = 10V)Qg (typical)39nCRG (typical)1.7ID PQFN 5X6 mm71 A(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsFeaturesBenefitsLow RDSon (

8.9. Size:261K infineon
irfh5250pbf.pdf

IRFH5250PbFHEXFET Power MOSFETVDS 25 VRDS(on) max 1.15 m(@VGS = 10V)Qg (typical) 52 nCRG (typical) 1.3 ID 100 APQFN 5X6 mm(@Tmb = 25C)Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsBenefitsFeaturesLow RDSon (

8.10. Size:292K infineon
irfh5250dpbf.pdf