IRFHM830D Datasheet and Replacement
Type Designator: IRFHM830D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 363
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0043
Ohm
Package:
PQFN3.3X3.3
- MOSFET Cross-Reference Search
IRFHM830D Datasheet (PDF)
..1. Size:243K international rectifier
irfhm830d.pdf 
PD -96327AIRFHM830DPbFHEXFET Power MOSFETVDS30 VRDS(on) max D 5 4 G4.3 m(@VGS = 10V)D 6 3 SQg (typical)13nCD 7 2 SRG (typical)1.1 D 8 1 SID 40 A3.3mm x 3.3mm PQFN(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for Buck ConvertersFeatures and BenefitsFeatures BenefitsLow RDSon ( 4.3m) Lower Conduction LossesSchottky intrin
..2. Size:243K international rectifier
irfhm830dpbf.pdf 
PD -96327AIRFHM830DPbFHEXFET Power MOSFETVDS30 VRDS(on) max D 5 4 G4.3 m(@VGS = 10V)D 6 3 SQg (typical)13nCD 7 2 SRG (typical)1.1 D 8 1 SID 40 A3.3mm x 3.3mm PQFN(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for Buck ConvertersFeatures and BenefitsFeatures BenefitsLow RDSon ( 4.3m) Lower Conduction LossesSchottky intrin
6.1. Size:532K 1
irfhm830trpbf.pdf 
IRFHM830PbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 3.8 m(@ VGS = 10V) Qg (typical) 15 nC Rg (typical) 2.5 ID 40 A(@TC (Bottom) = 25C) PQFN 3.3 x 3.3 mm Applications Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (
6.2. Size:532K international rectifier
irfhm830pbf.pdf 
IRFHM830PbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 3.8 m(@ VGS = 10V) Qg (typical) 15 nC Rg (typical) 2.5 ID 40 A(@TC (Bottom) = 25C) PQFN 3.3 x 3.3 mm Applications Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (
7.1. Size:593K 1
irfhm8329trpbf.pdf 
IRFHM8329PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 6.1G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 8.8 D Qg (typical) 13 nC D D D ID D 24 A(@TC (Bottom) = 25C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for
7.2. Size:655K international rectifier
irfhm8326.pdf 
IRFHM8326PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 4.7G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 6.7 D Qg (typical) 20 nC D D D ID D 70 A(@TC (Bottom) = 25C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for
7.3. Size:639K international rectifier
irfhm8329.pdf 
IRFHM8329PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 6.1G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 8.8 D Qg (typical) 13 nC D D D ID D 24 A(@TC (Bottom) = 25C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for
7.4. Size:319K international rectifier
irfhm8363pbf.pdf 
IRFHM8363PbFHEXFET Power MOSFETVDS 30 VVgs max V 20RDS(on) max G14.9 SG(@VGS = 10V)m SDD(@VGS = 4.5V)20.4DDDDQg typ6.7 nCPQFN Dual 3.3X3.3 mmID 10 A(@Tc(Bottom) = 25C)Applications Power Stage for high frequency buck converters Battery Protection charge and discharge switchesFeatures and BenefitsFeatures BenefitsLow
7.5. Size:246K international rectifier
irfhm8334.pdf 
IRFHM8334TRPbFVDS 30 V HEXFET Power MOSFETVGS max V 20RDS(on) max 9.0(@VGS = 10V) m(@VGS = 4.5V) 13.5Qg typ. 7.1 nCID PQFN 3.3 X 3.3 mm25 A(@Tc(Bottom) = 25C)Applications Control MOSFET for high frequency buck convertersFeatures BenefitsLow Thermal Resistance to PCB (
7.6. Size:669K international rectifier
irfhm8330.pdf 
IRFHM8330PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 6.6G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 9.9 D Qg (typical) 9.3 nC D D D ID D 25 A(@TC (Bottom) = 25C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Control MOSFET for sy
7.7. Size:629K international rectifier
irfhm8342.pdf 
IRFHM8342TRPbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 16(@ VGS = 10V) m(@ VGS = 4.5V) 25 Qg (typical) 5.0 nC ID 20 A(@TC (Bottom) = 25C) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Load Switch Features Benefits Low Charge (typical 5.2 nC) Low Switching Losses Low Thermal Resistance to PCB (
7.8. Size:256K international rectifier
irfhm831pbf.pdf 
PD -97539AIRFHM831PbFHEXFET Power MOSFETVDS30 VD 5 4 GRDS(on) max 7.8 m(@VGS = 10V) D 6 3 SD 7 2 SQg (typical) 7.3nCD 8 1 SRG (typical) 0.5ID PQFN 3.3mm x 3.3mm40 A(@Tc(Bottom) = 25C)Applications Control MOSFET for Buck ConvertersFeatures and BenefitsBenefitsFeaturesLow Charge (typical 7.3nC) Lower Switching LossesLow Thermal Resistance to PC
7.9. Size:651K international rectifier
irfhm8337.pdf 
IRFHM8337TRPbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 12.4(@ VGS = 10V) m(@ VGS = 4.5V) 17.9 Qg (typical) 5.4 nC ID PQFN 3.3 x 3.3 mm 18 A(@TC = 25C) Applications System/load switch, Charge or discharge switch for battery protection Features Benefits Low Thermal Resistance to PCB (
7.10. Size:598K infineon
irfhm8326pbf.pdf 
IRFHM8326PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 4.7G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 6.7 D Qg (typical) 20 nC D D D ID D 70 A(@TC (Bottom) = 25C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for
7.11. Size:593K infineon
irfhm8329pbf.pdf 
IRFHM8329PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 6.1G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 8.8 D Qg (typical) 13 nC D D D ID D 24 A(@TC (Bottom) = 25C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for
Datasheet: WPB4002
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.
History: SJMN099RH65SW
| AM7361P
| FQU13N10
| SFB053N100C3
| NTMFS4837NHT1G
| SWMI4N65D
| BMS3003
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