All MOSFET. IRFHM830D Datasheet

 

IRFHM830D MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFHM830D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.35 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 363 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: PQFN3.3X3.3

 IRFHM830D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFHM830D Datasheet (PDF)

 ..1. Size:243K  international rectifier
 irfhm830d.pdf

IRFHM830D IRFHM830D

PD -96327AIRFHM830DPbFHEXFET Power MOSFETVDS30 VRDS(on) max D 5 4 G4.3 m(@VGS = 10V)D 6 3 SQg (typical)13nCD 7 2 SRG (typical)1.1 D 8 1 SID 40 A3.3mm x 3.3mm PQFN(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for Buck ConvertersFeatures and BenefitsFeatures BenefitsLow RDSon ( 4.3m) Lower Conduction LossesSchottky intrin

 ..2. Size:243K  international rectifier
 irfhm830dpbf.pdf

IRFHM830D IRFHM830D

PD -96327AIRFHM830DPbFHEXFET Power MOSFETVDS30 VRDS(on) max D 5 4 G4.3 m(@VGS = 10V)D 6 3 SQg (typical)13nCD 7 2 SRG (typical)1.1 D 8 1 SID 40 A3.3mm x 3.3mm PQFN(@Tc(Bottom) = 25C)Applications Synchronous MOSFET for Buck ConvertersFeatures and BenefitsFeatures BenefitsLow RDSon ( 4.3m) Lower Conduction LossesSchottky intrin

 6.1. Size:532K  1
 irfhm830trpbf.pdf

IRFHM830D IRFHM830D

IRFHM830PbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 3.8 m(@ VGS = 10V) Qg (typical) 15 nC Rg (typical) 2.5 ID 40 A(@TC (Bottom) = 25C) PQFN 3.3 x 3.3 mm Applications Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (

 6.2. Size:229K  international rectifier
 irfhm830pbf.pdf

IRFHM830D IRFHM830D

PD - 97547AIRFHM830PbFHEXFET Power MOSFETVDS30 VRDS(on) max 3.8 m D 5 4 G(@VGS = 10V)D 6 3 SQg (typical)15nCD 7 2 SRG (typical)2.5 D 8 1 S3.3mm x 3.3mm PQFNID 40 A(@Tc(Bottom) = 25C)Applications Battery Operated DC Motor Inverter MOSFETFeatures and BenefitsFeatures BenefitsLow RDSon (

 6.3. Size:532K  infineon
 irfhm830pbf.pdf

IRFHM830D IRFHM830D

IRFHM830PbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 3.8 m(@ VGS = 10V) Qg (typical) 15 nC Rg (typical) 2.5 ID 40 A(@TC (Bottom) = 25C) PQFN 3.3 x 3.3 mm Applications Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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