IRFL4315
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFL4315
Marking Code: FL4315
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 2.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12
nC
trⓘ - Rise Time: 21
nS
Cossⓘ -
Output Capacitance: 100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.185
Ohm
Package:
SOT223
IRFL4315
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFL4315
Datasheet (PDF)
..1. Size:197K international rectifier
irfl4315pbf.pdf 
PD - 95258AIRFL4315PbFHEXFET Power MOSFETVDSS RDS(on) max IDApplicationsl High frequency DC-DC converters150V 185mW@VGS = 10V 2.6ABenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance Including Effective COSS to Simplify Design, (SeeApp. Note AN1001)SOT-223l Fully Characterized Avalanche Voltageand Currentl Lead-FreeAbs
..2. Size:121K international rectifier
irfl4315.pdf
PD - 94445IRFL4315SMPS MOSFETHEXFET Power MOSFETVDSS RDS(on) max IDApplications High frequency DC-DC converters150V 185m@VGS = 10V 2.6ABenefits Low Gate to Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (SeeApp. Note AN1001)SOT-223 Fully Characterized Avalanche Voltagean
..3. Size:197K infineon
irfl4315pbf.pdf
PD - 95258AIRFL4315PbFHEXFET Power MOSFETVDSS RDS(on) max IDApplicationsl High frequency DC-DC converters150V 185mW@VGS = 10V 2.6ABenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance Including Effective COSS to Simplify Design, (SeeApp. Note AN1001)SOT-223l Fully Characterized Avalanche Voltageand Currentl Lead-FreeAbs
7.1. Size:659K international rectifier
irfl4310pbf.pdf
PD - 95144IRFL4310PbFHEXFET Power MOSFETD Surface MountVDSS = 100V Dynamic dv/dt Rating Fast Switching Ease of ParallelingRDS(on) = 0.20 Advanced Process TechnologyG Ultra Low On-ResistanceID = 1.6A Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per
7.2. Size:313K international rectifier
irfl4310.pdf
PD - 91368BIRFL4310HEXFET Power MOSFETDVDSS = 100Vl Surface Mountl Dynamic dv/dt Ratingl Fast SwitchingRDS(on) = 0.20Wl Ease of ParallelingGl Advanced Process Technologyl Ultra Low On-ResistanceID = 1.6ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon ar
7.3. Size:662K infineon
irfl4310pbf.pdf
PD - 95144IRFL4310PbFHEXFET Power MOSFETD Surface MountVDSS = 100V Dynamic dv/dt Rating Fast Switching Ease of ParallelingRDS(on) = 0.20 Advanced Process TechnologyG Ultra Low On-ResistanceID = 1.6A Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per
7.4. Size:2332K cn vbsemi
irfl4310tr.pdf
IRFL4310TRwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedcRDS(on) () at VGS = 10 V 0.019 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.021ID (A) 7Configuration SingleDSOT-223GDSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PA
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