All MOSFET. IRFP260M Datasheet

 

IRFP260M MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP260M

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 50 A

Total Gate Charge (Qg): 156 nC

Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm

Package: TO247AC

IRFP260M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP260M Datasheet (PDF)

0.1. irfp260mpbf.pdf Size:634K _international_rectifier

IRFP260M
IRFP260M

PD - 96293 IRFP260MPbF HEXFET® Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 200V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.04Ω l Fully Avalanche Rated G l Ease of Paralleling ID = 50A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq

7.1. auirfp2602.pdf Size:207K _international_rectifier

IRFP260M
IRFP260M

PD - 96420 AUTOMOTIVE GRADE AUIRFP2602 HEXFET® Power MOSFET Features Advanced Process Technology D V(BR)DSS 24V Low On-Resistance 175°C Operating Temperature RDS(on) typ. 1.25m Ω Fast Switching max. 1.6m Ω Repetitive Avalanche Allowed up to Tjmax G Lead-Free, RoHS Compliant ID (Silicon Limited) 380A Automotive Qualified * S ID (Package Limited) 180A Description

7.2. irfp260pbf.pdf Size:1340K _international_rectifier

IRFP260M
IRFP260M

PD- 95915 IRFP260PbF • Lead-Free 9/27/04 Document Number: 91215 www.vishay.com 1 IRFP260PbF Document Number: 91215 www.vishay.com 2 IRFP260PbF Document Number: 91215 www.vishay.com 3 IRFP260PbF Document Number: 91215 www.vishay.com 4 IRFP260PbF Document Number: 91215 www.vishay.com 5 IRFP260PbF Document Number: 91215 www.vishay.com 6 IRFP260PbF Peak Diode Recovery

 7.3. irfp260.pdf Size:168K _international_rectifier

IRFP260M
IRFP260M



7.4. irfp260n.pdf Size:122K _international_rectifier

IRFP260M
IRFP260M

PD - 94004A IRFP260N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching RDS(on) = 0.04Ω G Fully Avalanche Rated Ease of Paralleling ID = 50A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

 7.5. irfp260npbf.pdf Size:180K _international_rectifier

IRFP260M
IRFP260M

PD - 95010A IRFP260NPbF HEXFET® Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 200V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.04Ω l Fully Avalanche Rated G l Ease of Paralleling ID = 50A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni

7.6. irfp260 sihfp260.pdf Size:1762K _vishay

IRFP260M
IRFP260M

IRFP260, SiHFP260 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 200 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.055 RoHS* • Isolated Central Mounting Hole Qg (Max.) (nC) 230 COMPLIANT • Fast Switching Qgs (nC) 42 • Ease of Paralleling Qgd (nC) 110 • Simple Drive Requirements Configuration Single • Comp

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top