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IRFP260M Spec and Replacement


   Type Designator: IRFP260M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 603 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO247AC

 IRFP260M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP260M Specs

 ..1. Size:634K  international rectifier
irfp260mpbf.pdf pdf_icon

IRFP260M

PD - 96293 IRFP260MPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 200V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.04 l Fully Avalanche Rated G l Ease of Paralleling ID = 50A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq... See More ⇒

 ..2. Size:247K  inchange semiconductor
irfp260m.pdf pdf_icon

IRFP260M

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP260M IIRFP260M FEATURES Static drain-source on-resistance RDS(on) 40m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Dr... See More ⇒

 7.1. Size:180K  international rectifier
irfp260npbf.pdf pdf_icon

IRFP260M

PD - 95010A IRFP260NPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 200V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.04 l Fully Avalanche Rated G l Ease of Paralleling ID = 50A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni... See More ⇒

 7.2. Size:122K  international rectifier
irfp260n.pdf pdf_icon

IRFP260M

PD - 94004A IRFP260N HEXFET Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 0.04 G Fully Avalanche Rated Ease of Paralleling ID = 50A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme... See More ⇒

Detailed specifications: IRFL024Z , IRFL4315 , IRFML8244 , IRFP1405 , IRFP150M , IRFP150V , IRFP250M , IRFP250N , AO4468 , IRFP260N , IRFP2907 , IRFP2907Z , IRFP3077 , IRFP3206 , IRFP3306 , IRFP3415 , IRFP3703 .

Keywords - IRFP260M MOSFET specs

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