All MOSFET. IRFP4232 Datasheet

 

IRFP4232 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP4232

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 430 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 60 A

Total Gate Charge (Qg): 160 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0357 Ohm

Package: TO247AC

IRFP4232 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP4232 Datasheet (PDF)

1.1. irfp4232pbf.pdf Size:290K _upd-mosfet

IRFP4232
IRFP4232

PD - 96965A IRFP4232PbF PDP MOSFET Features Key Parameters l Advanced process technology VDS min 250 V l Key parameters optimized for PDP Sustain & Energy Recovery applications VDS (Avalanche) typ. 300 V l Low EPULSE rating to reduce the power m RDS(ON) typ. @ 10V 30 dissipation in Sustain & ER applications EPULSE typ. 310 µJ l Low QG for fast response IRP max @ TC= 100°C l

4.1. irfp4242pbf.pdf Size:290K _upd-mosfet

IRFP4232
IRFP4232

PD - 96966B IRFP4242PbF PDP MOSFET Features Key Parameters l Advanced process technology VDS min 300 V l Key parameters optimized for PDP Sustain & Energy Recovery applications VDS (Avalanche) typ. 360 V l Low EPULSE rating to reduce the power m RDS(ON) typ. @ 10V 49 dissipation in Sustain & ER applications IRP max @ TC= 100°C 93 A l Low QG for fast response TJ max l High re

4.2. irfp4227pbf.pdf Size:296K _upd-mosfet

IRFP4232
IRFP4232

PD - 97070A IRFP4227PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 21 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 130 A and Pass Switch Applications

 4.3. irfp4228pbf.pdf Size:300K _upd-mosfet

IRFP4232
IRFP4232

PD - 97229A IRFP4228PbF PDP SWITCH Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for PDP VDS min 150 V Sustain, Energy Recovery and Pass VDS (Avalanche) typ. 180 V Switch Applications RDS(ON) typ. @ 10V m 12 l Low EPULSE Rating to Reduce Power IRP max @ TC= 100°C 170 A Dissipation in PDP Sustain, Energy TJ max 175 °C Recovery and Pass

4.4. irfp4229pbf.pdf Size:301K _upd-mosfet

IRFP4232
IRFP4232

PD - 97079B IRFP4229PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 38 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 87 A and Pass Switch Applications

 4.5. irfp4227pbf.pdf Size:212K _inchange_semiconductor

IRFP4232
IRFP4232

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFP4227PBF ·FEATURES ·With TO-247 packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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