IRFP4710 Datasheet and Replacement

PD - 94361IRFP4710HEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters100V 0.014 72A Motor Control Uninterruptible Power SuppliesBenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-247AC Fully Characterized Avalanche Volta

PD - 95055IRFP4710PbFHEXFET Power MOSFETAppIicationsVDSS RDS(on) max IDl High frequency DC-DC converters100V 0.014 72Al Motor Controll Uninterruptible Power Suppliesl Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-247ACl Fully Charact

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4710IIRFP4710FEATURESStatic drain-source on-resistance:RDS(on)14mEnhancement mode:Vth =3.5 to 5.5 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency DC-DC ConvertersUninterruptible Power Suppl

PD - 97379IRFP4768PbFHEXFET Power MOSFETDApplicationsVDSS250Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 14.5ml High Speed Power SwitchingGmax. 17.5ml Hard Switched and High Frequency CircuitsID 93ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance

IRFP 470 VDSS = 500 VMegaMOSTMFETID (cont) = 24 ARDS(on) = 0.23 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C24 AG = Gate, D = Drain,IDM TC = 25C, pulse width limited by TJM 96 A

isc N-Channel MOSFET Transistor IRFP470FEATURESWith TO-247 packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

isc N-Channel MOSFET Transistor IRFP4768IIRFP4768FEATURESStatic drain-source on-resistance:RDS(on)17.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Swit