All MOSFET. IRFR1010Z Datasheet

 

IRFR1010Z Datasheet and Replacement


   Type Designator: IRFR1010Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 91 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 76 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: DPAK
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IRFR1010Z Datasheet (PDF)

 ..1. Size:328K  international rectifier
irfr1010zpbf irfu1010zpbf.pdf pdf_icon

IRFR1010Z

PD - 95951AIRFR1010ZPbFIRFU1010ZPbFFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 7.5mG Lead-FreeID = 42ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re

 ..2. Size:241K  inchange semiconductor
irfr1010z.pdf pdf_icon

IRFR1010Z

isc N-Channel MOSFET Transistor IRFR1010Z, IIRFR1010ZFEATURESStatic drain-source on-resistance:RDS(on)7.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Ga

 0.1. Size:242K  international rectifier
auirfr1010z.pdf pdf_icon

IRFR1010Z

PD - 97683AUTOMOTIVE GRADEAUIRFR1010ZHEXFET Power MOSFETFeaturesDVDSS Advanced Process Technology 55V Low On-Resistance RDS(on) typ.5.8m 175C Operating Temperature max. 7.5mG Fast SwitchingID (Silicon Limited) 91A Repetitive Avalanche Allowed up to TjmaxID (Package Limited)S 42A Lead-Free, RoHS Compliant Automotive Qualifie

 7.1. Size:368K  international rectifier
irfr1018epbf irfu1018epbf.pdf pdf_icon

IRFR1010Z

PD - 97129AIRFR1018EPbFIRFU1018EPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification inSMPS D VDSS60Vl Uninterruptible Power SupplyRDS(on) typ.7.1m:l High Speed Power Switchingmax. 8.4m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)79A cID (Package Limited)S 56A Benefitsl Improved Gate, Avalanche and Dyna

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFH8311PBF | FCPF7N60YDTU | CJD04N65A | SM6A12NSFP

Keywords - IRFR1010Z MOSFET datasheet

 IRFR1010Z cross reference
 IRFR1010Z equivalent finder
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