All MOSFET. IRFR13N20D Datasheet


IRFR13N20D MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFR13N20D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V

Maximum Drain Current |Id|: 14 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 25 nC

Maximum Drain-Source On-State Resistance (Rds): 0.235 Ohm

Package: DPAK

IRFR13N20D Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRFR13N20D Datasheet (PDF)

0.1. irfr13n20dpbf irfu13n20dpbf.pdf Size:684K _international_rectifier


PD-95354A SMPS MOSFET IRFR13N20DPbF IRFU13N20DPbF • Lead-Free 1 1/17/05 IRFR/U13N20DPbF 2 IRFR/U13N20DPbF 3 IRFR/U13N20DPbF 4 IRFR/U13N20DPbF 5 IRFR/U13N20DPbF 6 IRFR/U13N20DPbF 7 IRFR/U13N20DPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (T

0.2. irfr13n20d.pdf Size:181K _international_rectifier


PD- 93814A IRFR13N20D SMPS MOSFET IRFU13N20D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.235Ω 13A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak Fully Characterized Avalanche Voltage IRFR13N20D IRF

 0.3. irfr13n20d.pdf Size:242K _inchange_semiconductor


isc N-Channel MOSFET Transistor IRFR13N20D, IIRFR13N20D ·FEATURES ·Static drain-source on-resistance: RDS(on)≤235mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


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