IRFR2307Z PDF and Equivalents Search

 

IRFR2307Z Specs and Replacement

Type Designator: IRFR2307Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 53 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: DPAK

IRFR2307Z substitution

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IRFR2307Z datasheet

 ..1. Size:352K  international rectifier
irfr2307zpbf irfu2307zpbf.pdf pdf_icon

IRFR2307Z

PD - 96191B IRFR2307ZPbF IRFU2307ZPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 16m G Description ID = 42A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resi... See More ⇒

 ..2. Size:241K  inchange semiconductor
irfr2307z.pdf pdf_icon

IRFR2307Z

isc N-Channel MOSFET Transistor IRFR2307Z, IIRFR2307Z FEATURES Static drain-source on-resistance RDS(on) 16m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75 V... See More ⇒

 0.1. Size:298K  international rectifier
auirfr2307ztr.pdf pdf_icon

IRFR2307Z

PD - 97546 AUTOMOTIVE GRADE AUIRFR2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V(BR)DSS 75V 175 C Operating Temperature RDS(on) max. 16m Fast Switching Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 53A Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automotive Qualified * Desc... See More ⇒

 0.2. Size:678K  infineon
auirfr2307z.pdf pdf_icon

IRFR2307Z

AUTOMOTIVE GRADE AUIRFR2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 75V 175 C Operating Temperature RDS(on) max. 16m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 53A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Descri... See More ⇒

Detailed specifications: IRFR1010Z, IRFR1018E, IRFR120Z, IRFR13N15D, IRFR13N20D, IRFR15N20D, IRFR18N15D, IRFR220N, IRF4905, IRFR2405, IRFR2407, IRFR24N15D, IRFR2607Z, IRFR2905Z, IRFR3410, IRFR3411, IRFR3504Z

Keywords - IRFR2307Z MOSFET specs

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