IRFR2905Z PDF and Equivalents Search

 ..1. Size:336K  international rectifier
 irfr2905zpbf irfu2905zpbf.pdf

PD - 95943B IRFR2905ZPbF IRFU2905ZPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 14.5m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 42A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re... See More ⇒

 ..2. Size:242K  inchange semiconductor
 irfr2905z.pdf

isc N-Channel MOSFET Transistor IRFR2905Z, IIRFR2905Z FEATURES Static drain-source on-resistance RDS(on) 14.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V G... See More ⇒

 0.1. Size:285K  international rectifier
 auirfr2905ztr.pdf

PD - 96320 AUTOMOTIVE GRADE AUIRFR2905Z HEXFET Power MOSFET V(BR)DSS 55V Features D l Advanced Process Technology RDS(on) typ. 11.1m l Ultra Low On-Resistance l 175 C Operating Temperature max. 14.5m G l Fast Switching ID (Silicon Limited) 59A l Repetitive Avalanche Allowed up to Tjmax S l Lead-Free, RoHS Compliant ID (Package Limited) 42A l Automotive Qualified *... See More ⇒

 0.2. Size:668K  infineon
 auirfr2905z.pdf

AUTOMOTIVE GRADE AUIRFR2905Z Features VDSS 55V Advanced Process Technology RDS(on) typ. 11.1m Ultra Low On-Resistance 175 C Operating Temperature max. 14.5m Fast Switching ID (Silicon Limited) 59A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A Lead-Free, RoHS Compliant Automotive Qualified * D S Des... See More ⇒

 9.1. Size:215K  1
 irfu224a irfr224a.pdf

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 9.2. Size:515K  1
 irfr220 irfr222 irfu220 irfu222.pdf

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 9.3. Size:256K  1
 irfu220a irfr220a.pdf

IRFR/U220A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.626 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ra... See More ⇒

 9.4. Size:190K  1
 irfu214a irfr214a.pdf

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 9.5. Size:170K  1
 irfr210 irfr212.pdf

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 9.6. Size:216K  1
 irfu230a irfr230a.pdf

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 9.7. Size:90K  1
 irfr220.pdf

IRFR220, IRFU220 Data Sheet January 2002 4.6A, 200V, 0.800 Ohm, N-Channel Power Features MOSFETs 4.6A, 200V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.800 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown aval... See More ⇒

 9.8. Size:86K  international rectifier
 irfr0xx irfr1xx irfr2xx irfr3xx irfr420 irfr9xx .pdf

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 9.9. Size:1880K  international rectifier
 irfr220pbf irfu220pbf.pdf

PD - 95069A IRFR220PbF IRFU220PbF Lead-Free 12/14/04 Document Number 91270 www.vishay.com 1 IRFR/U220PbF Document Number 91270 www.vishay.com 2 IRFR/U220PbF Document Number 91270 www.vishay.com 3 IRFR/U220PbF Document Number 91270 www.vishay.com 4 IRFR/U220PbF Document Number 91270 www.vishay.com 5 IRFR/U220PbF Document Number 91270 www.vishay.com 6 IRFR/U2... See More ⇒

 9.10. Size:175K  international rectifier
 irfr224.pdf

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 9.11. Size:381K  international rectifier
 irfr2407pbf irfu2407pbf.pdf

PD-95033A IRFR2407PbF IRFU2407PbF Lead-Free www.irf.com 1 12/10/04 IRFR/U2407PbF 2 www.irf.com IRFR/U2407PbF www.irf.com 3 IRFR/U2407PbF 4 www.irf.com IRFR/U2407PbF www.irf.com 5 IRFR/U2407PbF 6 www.irf.com IRFR/U2407PbF www.irf.com 7 IRFR/U2407PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Informat... See More ⇒

 9.12. Size:352K  international rectifier
 irfr2307zpbf irfu2307zpbf.pdf

PD - 96191B IRFR2307ZPbF IRFU2307ZPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 16m G Description ID = 42A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resi... See More ⇒

 9.13. Size:132K  international rectifier
 irfr220n.pdf

PD- 94048 IRFR220N SMPS MOSFET IRFU220N HEXFET Power MOSFET Applications VDSS RDS(on) max (m ) ID High frequency DC-DC converters 200V 600 5.0A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak Fully Characterized Avalanche Voltage IRFR22ON IRFU220... See More ⇒

 9.14. Size:221K  international rectifier
 irfr2405pbf irfu2405pbf.pdf

PD - 95369A IRFR2405PbF IRFU2405PbF l Surface Mount (IRFR2405) HEXFET Power MOSFET l Straight Lead (IRFU2405) l Advanced Process Technology D VDSS = 55V l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated RDS(on) = 0.016 G l Lead-Free Description ID = 56A Seventh Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processing ... See More ⇒

 9.15. Size:204K  international rectifier
 auirfr2405.pdf

PD - 97688A AUTOMOTIVE GRADE AUIRFR2405 Features HEXFET Power MOSFET l Advanced Planar Technology D V(BR)DSS 55V Dynamic dV/dT Rating RDS(on) typ. l Low On-Resistance 11.8m l 175 C Operating Temperature max 16m G l Fast Switching ID (Silicon Limited) 56A l Fully Avalanche Rated S l Repetitive Avalanche Allowed ID (Package Limited) 30A up to Tjmax l Lead-Free, R... See More ⇒

 9.16. Size:276K  international rectifier
 irfr24n15dpbf.pdf

PD - 95370B IRFR24N15DPbF IRFU24N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 95m 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak IRFR24N15DPbF IRFU24N15DPbF l Fully Characterized Avalanch... See More ⇒

 9.17. Size:169K  international rectifier
 irfr214.pdf

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 9.18. Size:1298K  international rectifier
 irfr210pbf irfu210pbf.pdf

PD - 95068A IRFR210PbF IRFU210PbF Lead-Free 12/9/04 Document Number 91268 www.vishay.com 1 IRFR/U210PbF Document Number 91268 www.vishay.com 2 IRFR/U210PbF Document Number 91268 www.vishay.com 3 IRFR/U210PbF Document Number 91268 www.vishay.com 4 IRFR/U210PbF Document Number 91268 www.vishay.com 5 IRFR/U210PbF Document Number 91268 www.vishay.com 6 IRFR/U21... See More ⇒

 9.19. Size:276K  international rectifier
 irfr24n15dpbf irfu24n15dpbf.pdf

PD - 95370B IRFR24N15DPbF IRFU24N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 95m 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak IRFR24N15DPbF IRFU24N15DPbF l Fully Characterized Avalanch... See More ⇒

 9.20. Size:129K  international rectifier
 irfr2405.pdf

PD - 93861 IRFR2405 IRFU2405 HEXFET Power MOSFET Surface Mount (IRFR2405) Straight Lead (IRFU2405) D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating Fast Switching RDS(on) = 0.016 G Fully Avalanche Rated Description ID = 56A Seventh Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques to achieve extreme... See More ⇒

 9.21. Size:381K  international rectifier
 irfr2407pbf.pdf

PD-95033A IRFR2407PbF IRFU2407PbF Lead-Free www.irf.com 1 12/10/04 IRFR/U2407PbF 2 www.irf.com IRFR/U2407PbF www.irf.com 3 IRFR/U2407PbF 4 www.irf.com IRFR/U2407PbF www.irf.com 5 IRFR/U2407PbF 6 www.irf.com IRFR/U2407PbF www.irf.com 7 IRFR/U2407PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Informat... See More ⇒

 9.22. Size:162K  international rectifier
 irfr2605.pdf

PD - 9.1253 IRFR2605 IRFU2605 HEXFET Power MOSFET Ultra Low On-Resistance D ESD Protected Surface Mount (IRFR2605) VDSS = 55V Straight Lead (IRFU2605) G 150 C Operating Temperature RDS(on) = 0.075 Repetitive Avalanche Rated Fast Switching ID = 19A Description S Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques that achieve extre... See More ⇒

 9.23. Size:523K  international rectifier
 irfr224pbf irfu224pbf.pdf

PD- 95237A IRFR224PbF IRFU224PbF Lead-Free 12/03/04 Document Number 91271 www.vishay.com 1 IRFR/U224PbF Document Number 91271 www.vishay.com 2 IRFR/U224PbF Document Number 91271 www.vishay.com 3 IRFR/U224PbF Document Number 91271 www.vishay.com 4 IRFR/U224PbF Document Number 91271 www.vishay.com 5 IRFR/U224PbF Document Number 91271 www.vishay.com 6 IRFR/U22... See More ⇒

 9.24. Size:129K  international rectifier
 irfr2407.pdf

PD -93862 IRFR2407 IRFU2407 HEXFET Power MOSFET Surface Mount (IRFR2407) Straight Lead (IRFU2407) D Advanced Process Technology VDSS = 75V Dynamic dv/dt Rating Fast Switching RDS(on) = 0.026 G Fully Avalanche Rated Description ID = 42A Seventh Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques to achieve extremel... See More ⇒

 9.25. Size:347K  international rectifier
 irfr2607zpbf irfu2607zpbf.pdf

PD - 95953 IRFR2607ZPbF AUTOMOTIVE MOSFET IRFU2607ZPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 75V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 22m l Lead-Free G Description ID = 42A Specifically designed for Automotive applications, S this HEXFET Power MOSFET u... See More ⇒

 9.26. Size:282K  international rectifier
 auirfr2607ztr.pdf

PD - 96323 AUTOMOTIVE MOSFET AUIRFR2607Z HEXFET Power MOSFET Features V(BR)DSS 75V D l Advanced Process Technology RDS(on) typ. l Ultra Low On-Resistance 17.6m l 175 C Operating Temperature max. 22m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 45A S l Lead-Free, RoHS Compliant ID (Package Limited) 42A l Automotive Qualified * ... See More ⇒

 9.27. Size:108K  international rectifier
 irfr24n15d.pdf

PD - 94392 IRFR24N15D SMPS MOSFET IRFU24N15D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 95m 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRF... See More ⇒

 9.28. Size:171K  international rectifier
 irfr210.pdf

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 9.29. Size:134K  international rectifier
 irfr2407 irfu2407.pdf

PD -93862 IRFR2407 IRFU2407 HEXFET Power MOSFET Surface Mount (IRFR2407) Straight Lead (IRFU2407) D Advanced Process Technology VDSS = 75V Dynamic dv/dt Rating Fast Switching RDS(on) = 0.026 G Fully Avalanche Rated Description ID = 42A Seventh Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques to achieve extremel... See More ⇒

 9.30. Size:1415K  international rectifier
 irfr214pbf irfu214pbf.pdf

PD- 95384A IRFR214PbF IRFU214PbF Lead-Free 12/3/04 Document Number 91269 www.vishay.com 1 IRFR/U214PbF Document Number 91269 www.vishay.com 2 IRFR/U214PbF Document Number 91269 www.vishay.com 3 IRFR/U214PbF Document Number 91269 www.vishay.com 4 IRFR/U214PbF Document Number 91269 www.vishay.com 5 IRFR/U214PbF Document Number 91269 www.vishay.com 6 IRFR/U214... See More ⇒

 9.31. Size:173K  international rectifier
 irfr220.pdf

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 9.32. Size:224K  international rectifier
 irfr220npbf irfu220npbf.pdf

PD- 95063A IRFR220NPbF SMPS MOSFET IRFU220NPbF HEXFET Power MOSFET Applications VDSS RDS(on) max (m ) ID l High frequency DC-DC converters 200V 600 5.0A l Lead-Free Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak l Fully Characterized Avalanche V... See More ⇒

 9.33. Size:298K  international rectifier
 auirfr2307ztr.pdf

PD - 97546 AUTOMOTIVE GRADE AUIRFR2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V(BR)DSS 75V 175 C Operating Temperature RDS(on) max. 16m Fast Switching Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 53A Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automotive Qualified * Desc... See More ⇒

 9.34. Size:266K  philips
 irfr220-01.pdf

IRFR220 N-channel enhancement mode field effect transistor Rev. 01 14 August 2001 Product data M3D300 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability IRFR220 in SOT428 (D-PAK). 2. Features Fast switching Low on-state resistance Surface mount package. 3. Applications Switched mode p... See More ⇒

 9.35. Size:715K  fairchild semi
 irfr214b irfu214b.pdf

November 2001 IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.2A, 250V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.1 nC) planar, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored t... See More ⇒

 9.36. Size:655K  fairchild semi
 irfr210b irfu210b 2.pdf

November 2001 IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored t... See More ⇒

 9.37. Size:637K  fairchild semi
 irfr230btm am002.pdf

IRFR230B / IRFU230B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 200V, RDS(on) = 0.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 22 pF) This advanced technology has been especially tailored to Fast switc... See More ⇒

 9.38. Size:705K  fairchild semi
 irfr220btm fp001.pdf

November 2001 IRFR220B / IRFU220B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.6A, 200V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to ... See More ⇒

 9.39. Size:724K  fairchild semi
 irfr210b irfu210b.pdf

November 2001 IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored t... See More ⇒

 9.40. Size:502K  samsung
 irfr230a.pdf

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 7.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.333 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charac... See More ⇒

 9.41. Size:501K  samsung
 irfr210a.pdf

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 1.169 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara... See More ⇒

 9.42. Size:510K  samsung
 irfr214a.pdf

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Lower RDS(ON) 1.393 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Char... See More ⇒

 9.43. Size:1000K  samsung
 irfr234a.pdf

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.45 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Lower RDS(ON) 0.327 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic... See More ⇒

 9.44. Size:509K  samsung
 irfr224a.pdf

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Low RDS(ON) 0.742 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteri... See More ⇒

 9.45. Size:496K  samsung
 irfr220a.pdf

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.626 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteri... See More ⇒

 9.46. Size:1442K  vishay
 irfr220 irfu220 sihfr220 sihfu220 2.pdf

IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.80 RoHS* Surface Mount (IRFR220/SiHFR220) Qg (Max.) (nC) 14 COMPLIANT Straight Lead (IRFU220/SiHFU220) Qgs (nC) 3.0 Available in Tape and Reel Qgd (nC) 7.9 Configuration Si... See More ⇒

 9.47. Size:797K  vishay
 irfr220pbf irfu220pbf sihfr220 sihfu220.pdf

IRFR220, IRFU220, SiHFR220, SiHFU220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating VDS (V) 200 Repetitive avalanche rated RDS(on) ( )VGS = 10 V 0.80 Surface mount (IRFR220, SiHFR220) Straight lead (IRFU220, SiHFU220) Qg (Max.) (nC) 14 Available in tape and reel Qgs (nC) 3.0 Available Fast switching Qgd (nC) 7... See More ⇒

 9.48. Size:938K  vishay
 irfr224 irfu224 sihfr224 sihfu224.pdf

IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 1.1 Repetitive Avalanche Rated Qg (Max.) (nC) 14 Surface Mount (IRFR224, SiHFR224) Qgs (nC) 2.7 Straight Lead (IRFU224, SiHFU224) Available in Tape and Reel ... See More ⇒

 9.49. Size:821K  vishay
 irfr210pbf irfu210pbf sihfr210 sihfu210.pdf

IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.5 Surface Mount (IRFR210, SiHFR210) Qg (Max.) (nC) 8.2 Straight Lead (IRFU210, SiHFU210) Available in Tape and Reel Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Eas... See More ⇒

 9.50. Size:1537K  vishay
 irfr220 irfu220 sihfr220 sihfu220.pdf

IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.80 Repetitive Avalanche Rated Qg (Max.) (nC) 14 Surface Mount (IRFR220, SiHFR220) Qgs (nC) 3.0 Straight Lead (IRFU220, SiHFU220) Qgd (nC) 7.9 Available in T... See More ⇒

 9.51. Size:2021K  vishay
 irfr214 irfu214 sihfr214 sihfu214.pdf

IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 250 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 2.0 Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 Surface Mount (IRFR9210, SiHFR9210) Qgs (nC) 1.8 Straight Lead (IRFU9210, SiHFU9210) Qgd (nC) 4.5 Available... See More ⇒

 9.52. Size:351K  vishay
 irfr224pbf irfu224pbf sihfr224 sihfu224.pdf

IRFR224, IRFU224, SiHFR224, SiHFU224 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.1 Surface Mount (IRFR224, SiHFR224) Qg (Max.) (nC) 14 Straight Lead (IRFU224, SiHFU224) Qgs (nC) 2.7 Qgd (nC) 7.8 Available in Tape and Reel Configuration Single ... See More ⇒

 9.53. Size:2066K  vishay
 irfr210 irfu210 sihfr210 sihfu210.pdf

IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 1.5 Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 Surface Mount (IRFR210, SiHFR210) Qgs (nC) 1.8 Straight Lead (IRFU210, SiHFU210) Qgd (nC) 4.5 Available in ... See More ⇒

 9.54. Size:859K  vishay
 irfr214pbf irfu214pbf sihfr214 sihfu214.pdf

IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 Surface Mount (IRFR214, SiHFR214) Straight Lead (IRFU214, SiHFU214) Qg (Max.) (nC) 8.2 Available in Tape and Reel Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Eas... See More ⇒

 9.55. Size:671K  infineon
 auirfr2607z.pdf

AUTOMOTIVE GRADE AUIRFR2607Z Features VDSS 75V Advanced Process Technology RDS(on) typ. 17.6m Ultra Low On-Resistance 175 C Operating Temperature max. 22m Fast Switching ID (Silicon Limited) 45A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A Lead-Free, RoHS Compliant Automotive Qualified * D S Descr... See More ⇒

 9.56. Size:678K  infineon
 auirfr2307z.pdf

AUTOMOTIVE GRADE AUIRFR2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 75V 175 C Operating Temperature RDS(on) max. 16m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 53A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Descri... See More ⇒

 9.57. Size:473K  infineon
 auirfr2407.pdf

AUTOMOTIVE GRADE AUIRFR2407 HEXFET Power MOSFET Features Advanced Planar Technology VDSS 75V Low On-Resistance Dynamic dV/dT Rating RDS(on) typ. 21.8m 175 C Operating Temperature max. 26m Fast Switching Fully Avalanche Rated ID (Silicon Limited) 42A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualifi... See More ⇒

 9.58. Size:1484K  cn vbsemi
 irfr2307ztr.pdf

IRFR2307ZTR www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0185 at VGS = 10 V 100 60 38 nC APPLICATIONS Primary Side Switch Isolated DC/DC Converter TO-252 D G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless oth... See More ⇒

 9.59. Size:287K  inchange semiconductor
 irfr224.pdf

iscN-Channel MOSFET Transistor IRFR224 FEATURES Low drain-source on-resistance RDS(ON) 1.1 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒

 9.60. Size:242K  inchange semiconductor
 irfr220n.pdf

isc N-Channel MOSFET Transistor IRFR220N, IIRFR220N FEATURES Static drain-source on-resistance RDS(on) 600m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage ... See More ⇒

 9.61. Size:287K  inchange semiconductor
 irfr214.pdf

iscN-Channel MOSFET Transistor IRFR214 FEATURES Low drain-source on-resistance RDS(ON) 2.0 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒

 9.62. Size:241K  inchange semiconductor
 irfr2307z.pdf

isc N-Channel MOSFET Transistor IRFR2307Z, IIRFR2307Z FEATURES Static drain-source on-resistance RDS(on) 16m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75 V... See More ⇒

 9.63. Size:241K  inchange semiconductor
 irfr2405.pdf

isc N-Channel MOSFET Transistor IRFR2405, IIRFR2405 FEATURES Static drain-source on-resistance RDS(on) 16m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V ... See More ⇒

 9.64. Size:241K  inchange semiconductor
 irfr2407.pdf

isc N-Channel MOSFET Transistor IRFR2407, IIRFR2407 FEATURES Static drain-source on-resistance RDS(on) 26m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75 V DSS V Gate-... See More ⇒

 9.65. Size:241K  inchange semiconductor
 irfr2607z.pdf

isc N-Channel MOSFET Transistor IRFR2607Z, IIRFR2607Z FEATURES Static drain-source on-resistance RDS(on) 22m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75 V DSS V Gat... See More ⇒

 9.66. Size:241K  inchange semiconductor
 irfr24n15d.pdf

isc N-Channel MOSFET Transistor IRFR24N15D, IIRFR24N15D FEATURES Static drain-source on-resistance RDS(on) 95m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 15... See More ⇒

 9.67. Size:288K  inchange semiconductor
 irfr220.pdf

iscN-Channel MOSFET Transistor IRFR220 FEATURES Low drain-source on-resistance RDS(ON) 0.8 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒