BF994 Specs and Replacement

Type Designator: BF994

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 17 V

|Id| ⓘ - Maximum Drain Current: 0.03 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 2.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm

Package: SOT143

BF994 substitution

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BF994 datasheet

 0.1. Size:32K  philips
 bf994s 2.pdf pdf_icon

BF994

DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back di... See More ⇒

 0.2. Size:41K  philips
 bf994s 1.pdf pdf_icon

BF994

DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back di... See More ⇒

 0.3. Size:180K  philips
 bf994s.pdf pdf_icon

BF994

DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET Product specification July 1993 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes between gates microminiature package wi... See More ⇒

Detailed specifications: BF989, BF989S, BF990, BF990A, BF991, BF992, BF992R, BF993, AOD4184A, BF994S, BF994SR, BF995, BF996, BF996S, BF996SR, BF997, BF998

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