IRFR3707Z
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFR3707Z
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.25
V
|Id|ⓘ - Maximum Drain Current: 56
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 9.6
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 260
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095
Ohm
Package:
DPAK
IRFR3707Z
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFR3707Z
Datasheet (PDF)
..1. Size:215K international rectifier
irfr3707z.pdf 
PD - 94648IRFR3707ZIRFU3707ZApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 9.5m: 9.6nC Converters with Synchronous Rectification for Telecom and Industrial UseBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche
..2. Size:546K infineon
irfr3707zpbf irfu3707zpbf.pdf
IRFR3707ZPbF IRFU3707ZPbF HEXFET Power MOSFET Applications High Frequency Synchronous Buck VDSS 30V Converters for Computer Processor Power RDS(on) max 9.5m High Frequency Isolated DC-DC Converters with Synchronous Rectification Qg 9.6nC for Telecom and Industrial Use D D S S D G G I- Pak D- Pak Benefits IRFU3707ZPbF IRFR3707ZPbF
..3. Size:243K inchange semiconductor
irfr3707z.pdf
isc N-Channel MOSFET Transistor IRFR3707Z, IIRFR3707ZFEATURESStatic drain-source on-resistance:RDS(on)9.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck ConvertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So
0.1. Size:295K international rectifier
irfr3707zcpbf irfu3707zcpbf.pdf
PD - 96045IRFR3707ZCPbFIRFU3707ZCPbFApplicationsl High Frequency Synchronous Buck HEXFET Power MOSFETConverters for Computer Processor PowerVDSS RDS(on) maxQgl High Frequency Isolated DC-DC Converters with Synchronous Rectification30V 9.5m 9.6nC for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Char
0.2. Size:845K cn vbsemi
irfr3707ztr.pdf
IRFR3707ZTRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABS
6.1. Size:224K international rectifier
irfr3707pbf.pdf
PD - 95019AIRFR3707PbFSMPS MOSFETIRFRU3707PbFApplicationsHEXFET Power MOSFETl High Frequency DC-DC IsolatedVDSS RDS(on) max IDConverters with Synchronous Rectificationfor Telecom and Industrial use 30V 13m 61Al High Frequency Buck Converters forComputer Processor Powerl Lead-FreeBenefitsl Ultra-Low RDS(on)l Very Low Gate Impedancel Fully Characterized Ava
6.2. Size:139K international rectifier
irfr3707 irfu3707.pdf
PD - 93934BIRFR3707SMPS MOSFETIRFU3707ApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedVDSS RDS(on) max IDConverters with Synchronous Rectificationfor Telecom and Industrial use 30V 13m 61A High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low RDS(on) Very Low Gate Impedance Fully Characterized Avalanche Voltageand Current
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