IRFR3710Z PDF and Equivalents Search

 

IRFR3710Z Specs and Replacement

Type Designator: IRFR3710Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 56 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: DPAK

IRFR3710Z substitution

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IRFR3710Z datasheet

 ..1. Size:359K  international rectifier
irfr3710zpbf irfu3710zpbf irfu3710z-701pbf.pdf pdf_icon

IRFR3710Z

PD - 95513D IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 100V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 18m l Multiple Package Options G l Lead-Free ID = 42A Description S This HEXFET Power MOSFET utilizes the latest pro... See More ⇒

 ..2. Size:359K  international rectifier
irfr3710zpbf.pdf pdf_icon

IRFR3710Z

PD - 95513D IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 100V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 18m l Multiple Package Options G l Lead-Free ID = 42A Description S This HEXFET Power MOSFET utilizes the latest pro... See More ⇒

 ..3. Size:242K  inchange semiconductor
irfr3710z.pdf pdf_icon

IRFR3710Z

isc N-Channel MOSFET Transistor IRFR3710Z, IIRFR3710Z FEATURES Static drain-source on-resistance RDS(on) 18m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75 V DSS V Gat... See More ⇒

 0.1. Size:272K  international rectifier
auirfr3710ztrl.pdf pdf_icon

IRFR3710Z

PD - 97451 AUTOMOTIVE GRADE AUIRFR3710Z HEXFET Power MOSFET Features D l Advanced Process Technology V(BR)DSS 100V l Ultra Low On-Resistance RDS(on) max. 18m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 56A l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 42A l Lead-Free, RoHS Compliant l Automotive Qualified * Description ... See More ⇒

Detailed specifications: IRFR3518, IRFR3607, IRFR3704Z, IRFR3707Z, IRFR3707ZC, IRFR3708, IRFR3709Z, IRFR3709ZC, NCEP15T14, IRFR3711Z, IRFR3711ZC, IRFR3806, IRFR4104, IRFR4105Z, IRFR4615, IRFR4620, IRFR48Z

Keywords - IRFR3710Z MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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