All MOSFET. IRFR3710Z Datasheet

 

IRFR3710Z Datasheet and Replacement


   Type Designator: IRFR3710Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 56 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 69 nC
   tr ⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: DPAK
 

 IRFR3710Z substitution

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IRFR3710Z Datasheet (PDF)

 ..1. Size:359K  international rectifier
 irfr3710zpbf irfu3710zpbf irfu3710z-701pbf.pdf pdf_icon

IRFR3710Z

PD - 95513DIRFR3710ZPbFIRFU3710ZPbFIRFU3710Z-701PbFFeaturesl Advanced Process Technology HEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 100Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18ml Multiple Package OptionsGl Lead-FreeID = 42ADescription SThis HEXFET Power MOSFET utilizes thelatest pro

 ..2. Size:359K  international rectifier
 irfr3710zpbf.pdf pdf_icon

IRFR3710Z

PD - 95513DIRFR3710ZPbFIRFU3710ZPbFIRFU3710Z-701PbFFeaturesl Advanced Process Technology HEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 100Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 18ml Multiple Package OptionsGl Lead-FreeID = 42ADescription SThis HEXFET Power MOSFET utilizes thelatest pro

 ..3. Size:242K  inchange semiconductor
 irfr3710z.pdf pdf_icon

IRFR3710Z

isc N-Channel MOSFET Transistor IRFR3710Z, IIRFR3710ZFEATURESStatic drain-source on-resistance:RDS(on)18mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75 VDSSV Gat

 0.1. Size:272K  international rectifier
 auirfr3710ztrl.pdf pdf_icon

IRFR3710Z

PD - 97451AUTOMOTIVE GRADEAUIRFR3710ZHEXFET Power MOSFETFeaturesDl Advanced Process Technology V(BR)DSS100Vl Ultra Low On-ResistanceRDS(on) max.18ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)56Al Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)42Al Lead-Free, RoHS Compliantl Automotive Qualified *Description

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Datasheet: IRFR3518 , IRFR3607 , IRFR3704Z , IRFR3707Z , IRFR3707ZC , IRFR3708 , IRFR3709Z , IRFR3709ZC , IRFP450 , IRFR3711Z , IRFR3711ZC , IRFR3806 , IRFR4104 , IRFR4105Z , IRFR4615 , IRFR4620 , IRFR48Z .

History: IPP037N08N3 | STB40NF10L

Keywords - IRFR3710Z MOSFET datasheet

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 IRFR3710Z equivalent finder
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