BF994SR MOSFET. Datasheet pdf. Equivalent
Type Designator: BF994SR
SMD Transistor Code: ML
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.2 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 17 V
Maximum Drain Current |Id|: 0.05 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 2.5 pF
Maximum Drain-Source On-State Resistance (Rds): 50 Ohm
Package: SOT143R
BF994SR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BF994SR Datasheet (PDF)
4.1. bf994s 2.pdf 
Size:32K _philips
DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes
4.2. bf994s 1.pdf Size:41K _philips
DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes
4.3. bf994s.pdf Size:180K _philips
DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET Product specification July 1993 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION ? Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes between gates microminiature package with in
Datasheet: BF990 , BF990A , BF991 , BF992 , BF992R , BF993 , BF994 , BF994S , IRFP4229 , BF995 , BF996 , BF996S , BF996SR , BF997 , BF998 , BF998R , BF998WR .
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