BF994SR Specs and Replacement
Type Designator: BF994SR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 17 V
|Id| ⓘ - Maximum Drain Current: 0.05 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 2.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
Package: SOT143R
BF994SR substitution
BF994SR Specs
bf994s 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back di... See More ⇒
bf994s 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET July 1993 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back di... See More ⇒
bf994s.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET Product specification July 1993 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes between gates microminiature package wi... See More ⇒
Detailed specifications: BF990 , BF990A , BF991 , BF992 , BF992R , BF993 , BF994 , BF994S , 60N06 , BF995 , BF996 , BF996S , BF996SR , BF997 , BF998 , BF998R , BF998WR .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
