All MOSFET. BF994SR Datasheet

 

BF994SR Datasheet and Replacement


   Type Designator: BF994SR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 17 V
   |Id| ⓘ - Maximum Drain Current: 0.05 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 2.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
   Package: SOT143R
 

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BF994SR Datasheet (PDF)

 8.1. Size:32K  philips
 bf994s 2.pdf pdf_icon

BF994SR

DISCRETE SEMICONDUCTORSDATA SHEETBF994SN-channel dual-gate MOS-FETJuly 1993Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF994SFEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back di

 8.2. Size:41K  philips
 bf994s 1.pdf pdf_icon

BF994SR

DISCRETE SEMICONDUCTORSDATA SHEETBF994SN-channel dual-gate MOS-FETJuly 1993Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF994SFEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back di

 8.3. Size:180K  philips
 bf994s.pdf pdf_icon

BF994SR

DISCRETE SEMICONDUCTORS DATA SHEETBF994SN-channel dual-gate MOS-FETProduct specification July 1993NXP Semiconductors Product specificationN-channel dual-gate MOS-FET BF994SFEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes between gates microminiature package wi

Datasheet: BF990 , BF990A , BF991 , BF992 , BF992R , BF993 , BF994 , BF994S , IRFB7545 , BF995 , BF996 , BF996S , BF996SR , BF997 , BF998 , BF998R , BF998WR .

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