BF994SR Datasheet and Replacement
Type Designator: BF994SR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 17 V
|Id|ⓘ - Maximum Drain Current: 0.05 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 2.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
Package: SOT143R
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BF994SR Datasheet (PDF)
bf994s 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF994SN-channel dual-gate MOS-FETJuly 1993Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF994SFEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back di
bf994s 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF994SN-channel dual-gate MOS-FETJuly 1993Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF994SFEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back di
bf994s.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBF994SN-channel dual-gate MOS-FETProduct specification July 1993NXP Semiconductors Product specificationN-channel dual-gate MOS-FET BF994SFEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes between gates microminiature package wi
Datasheet: BF990 , BF990A , BF991 , BF992 , BF992R , BF993 , BF994 , BF994S , AO3407 , BF995 , BF996 , BF996S , BF996SR , BF997 , BF998 , BF998R , BF998WR .
History: AOB411L | TSM4424CS | LKK47-06C5 | BLS60R150-P | BF1100R | BRCS200P03DP | IRFB3004GPBF
Keywords - BF994SR MOSFET datasheet
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History: AOB411L | TSM4424CS | LKK47-06C5 | BLS60R150-P | BF1100R | BRCS200P03DP | IRFB3004GPBF
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