IRFS3507 Datasheet and Replacement
Type Designator: IRFS3507
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 97 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 81 nS
Cossⓘ - Output Capacitance: 340 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
Package: D2PAK
IRFS3507 substitution
IRFS3507 Datasheet (PDF)
irfb3507pbf irfs3507pbf irfsl3507pbf.pdf

PD - 95935BIRFB3507PbFIRFS3507PbFIRFSL3507PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS75Vl High Speed Power SwitchingRDS(on) typ.7.0ml Hard Switched and High Frequency Circuitsl Lead-FreeG max. 8.8mID97ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessSSS
irfs3507pbf.pdf

PD - 95935BIRFB3507PbFIRFS3507PbFIRFSL3507PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS75Vl High Speed Power SwitchingRDS(on) typ.7.0ml Hard Switched and High Frequency Circuitsl Lead-FreeG max. 8.8mID97ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessSSS
irfs350a.pdf

IRFS350AFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 11.5 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current: 10A (Max.) @ VDS = 400V Low RDS(ON): 0.254 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Character
Datasheet: IRFS31N20D , IRFS3206 , IRFS3207 , IRFS3207Z , IRFS3306 , IRFS3307 , IRFS3307Z , IRFS33N15D , IRFZ46N , IRFS3607 , IRFS3806 , IRFS38N20D , IRFS4010 , IRFS4010-7P , IRFS4115 , IRFS4115-7P , IRFS4127 .
History: IRFH5025
Keywords - IRFS3507 MOSFET datasheet
IRFS3507 cross reference
IRFS3507 equivalent finder
IRFS3507 lookup
IRFS3507 substitution
IRFS3507 replacement
History: IRFH5025



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