BF996
MOSFET. Datasheet pdf. Equivalent
Type Designator: BF996
Marking Code: M96_MD
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 0.03
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 2.2
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 200
Ohm
Package:
SOT143
BF996
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BF996
Datasheet (PDF)
0.1. Size:187K philips
bf996s.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBF996SN-channel dual-gate MOS-FETProduct specification April 1991NXP Semiconductors Product specificationN-channel dual-gate MOS-FET BF996SFEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes between gates microminiature package w
0.2. Size:42K philips
bf996s 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF996SN-channel dual-gate MOS-FETApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF996SFEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back d
0.3. Size:31K philips
bf996s 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF996SN-channel dual-gate MOS-FETApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF996SFEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back d
Datasheet: BF991
, BF992
, BF992R
, BF993
, BF994
, BF994S
, BF994SR
, BF995
, MDF11N65B
, BF996S
, BF996SR
, BF997
, BF998
, BF998R
, BF998WR
, BFC10
, BFC11
.