BF996S Datasheet and Replacement
Type Designator: BF996S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 17 V
|Id| ⓘ - Maximum Drain Current: 0.03 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 0.8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
Package: SOT143
BF996S substitution
BF996S Datasheet (PDF)
bf996s.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBF996SN-channel dual-gate MOS-FETProduct specification April 1991NXP Semiconductors Product specificationN-channel dual-gate MOS-FET BF996SFEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes between gates microminiature package w
bf996s 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF996SN-channel dual-gate MOS-FETApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF996SFEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back d
bf996s 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF996SN-channel dual-gate MOS-FETApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF996SFEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back d
Datasheet: BF992 , BF992R , BF993 , BF994 , BF994S , BF994SR , BF995 , BF996 , IRFP064N , BF996SR , BF997 , BF998 , BF998R , BF998WR , BFC10 , BFC11 , BFC12 .
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