All MOSFET. BF996S Datasheet

 

BF996S Datasheet and Replacement


   Type Designator: BF996S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 17 V
   |Id| ⓘ - Maximum Drain Current: 0.03 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 0.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
   Package: SOT143
 

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BF996S Datasheet (PDF)

 ..1. Size:187K  philips
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BF996S

DISCRETE SEMICONDUCTORS DATA SHEETBF996SN-channel dual-gate MOS-FETProduct specification April 1991NXP Semiconductors Product specificationN-channel dual-gate MOS-FET BF996SFEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes between gates microminiature package w

 ..2. Size:42K  philips
 bf996s 1.pdf pdf_icon

BF996S

DISCRETE SEMICONDUCTORSDATA SHEETBF996SN-channel dual-gate MOS-FETApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF996SFEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back d

 ..3. Size:31K  philips
 bf996s 2.pdf pdf_icon

BF996S

DISCRETE SEMICONDUCTORSDATA SHEETBF996SN-channel dual-gate MOS-FETApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FET BF996SFEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143integrated back-to-back d

Datasheet: BF992 , BF992R , BF993 , BF994 , BF994S , BF994SR , BF995 , BF996 , BS170 , BF996SR , BF997 , BF998 , BF998R , BF998WR , BFC10 , BFC11 , BFC12 .

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