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BF996S Specs and Replacement


   Type Designator: BF996S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 17 V
   |Id| ⓘ - Maximum Drain Current: 0.03 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 0.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
   Package: SOT143
 

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BF996S Specs

 ..1. Size:187K  philips
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BF996S

DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification April 1991 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes between gates microminiature package w... See More ⇒

 ..2. Size:42K  philips
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BF996S

DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET April 1991 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back d... See More ⇒

 ..3. Size:31K  philips
bf996s 2.pdf pdf_icon

BF996S

DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET April 1991 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back d... See More ⇒

Detailed specifications: BF992 , BF992R , BF993 , BF994 , BF994S , BF994SR , BF995 , BF996 , IRF730 , BF996SR , BF997 , BF998 , BF998R , BF998WR , BFC10 , BFC11 , BFC12 .

Keywords - BF996S MOSFET specs

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