IRFS4310
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFS4310
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 300
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 130
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 170
nC
trⓘ - Rise Time: 110
nS
Cossⓘ -
Output Capacitance: 540
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007
Ohm
Package:
D2PAK
IRFS4310
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFS4310
Datasheet (PDF)
..1. Size:376K international rectifier
irfb4310pbf irfs4310pbf irfsl4310pbf.pdf 
PD - 14275DIRFB4310PbFIRFS4310PbFIRFSL4310PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switchingl Hard Switched and High Frequency Circuits RDS(on) typ. 5.6mG max. 7.0mID 130ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized
..2. Size:376K infineon
irfb4310pbf irfs4310pbf irfsl4310pbf.pdf
PD - 14275DIRFB4310PbFIRFS4310PbFIRFSL4310PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switchingl Hard Switched and High Frequency Circuits RDS(on) typ. 5.6mG max. 7.0mID 130ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized
0.1. Size:324K international rectifier
irfb4310zpbf irfs4310zpbf irfsl4310zpbf.pdf
PD - 97115DIRFB4310ZPbFIRFS4310ZPbFIRFSL4310ZPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8m:l Uninterruptible Power Supplyl High Speed Power Switching max. 6.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)127A cID (Package Limited)120A SBenefitsl Improved Gate,
0.2. Size:334K international rectifier
auirfs4310trl.pdf
PD - 96324AUTOMOTIVE GRADEAUIRFS4310AUIRFSL4310FeaturesHEXFET Power MOSFETl Advanced Process TechnologyV(BR)DSSl Ultra Low On-Resistance 100VDl 175C Operating TemperatureRDS(on) typ.5.6ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmaxmax. 7.0mGl Lead-Free, RoHS CompliantID (Silicon Limited) 130A l Automotive Qualified *SID (Package L
0.3. Size:324K infineon
irfb4310zpbf irfs4310zpbf irfsl4310zpbf.pdf
PD - 97115DIRFB4310ZPbFIRFS4310ZPbFIRFSL4310ZPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8m:l Uninterruptible Power Supplyl High Speed Power Switching max. 6.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)127A cID (Package Limited)120A SBenefitsl Improved Gate,
0.4. Size:672K infineon
auirfs4310z.pdf
AUTOMOTIVE GRADE AUIRFS4310Z HEXFET Power MOSFET Features VDSS 100V Advanced Process Technology RDS(on) typ. 4.8m Ultra Low On-Resistance max. Dynamic dv/dt Rating 6.0m 175C Operating Temperature ID (Silicon Limited) 127A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS
0.5. Size:712K infineon
auirfs4310 auirfsl4310.pdf
AUIRFS4310 AUTOMOTIVE GRADE AUIRFSL4310 HEXFET Power MOSFET Features VDSS 100V Advanced Process Technology RDS(on) typ. 5.6m Ultra Low On-Resistance max. 7.0m 175C Operating Temperature Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Au
0.6. Size:258K inchange semiconductor
irfs4310z.pdf
Isc N-Channel MOSFET Transistor IRFS4310ZFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
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