IRFSL41N15D MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFSL41N15D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 41 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 63 nS
Cossⓘ - Output Capacitance: 510 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: TO262
IRFSL41N15D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFSL41N15D Datasheet (PDF)
irfb41n15dpbf irfib41n15dpbf irfs41n15dpbf irfsl41n15dpbf.pdf
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IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS 150V Benefits RDS(on) max 0.045 Low Gate-to-Drain Charge to Reduce Switching Losses ID 41A Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. D D Note AN1001) Fully Characteri
irfsl41n15d.pdf
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Isc N-Channel MOSFET Transistor IRFS41N15DFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 1
irfs4115pbf irfsl4115pbf.pdf
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PD - 96198AIRFS4115PbFIRFSL4115PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS150Vl Uninterruptible Power SupplyRDS(on) typ.10.3ml High Speed Power Switching max. 12.1ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 99A BenefitsID (Package Limited)195A Sl Improved Gate, Avalanche and Dynamic
auirfsl4115.pdf
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AUIRFS4115AUTOMOTIVE GRADEAUIRFSL4115HEXFET Power MOSFETFeaturesDVDSS150Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.10.3ml 175C Operating Temperaturel Fast SwitchingG max. 12.1ml Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS CompliantID99A l Automotive Qualified * SDDescriptionDSpecifically designed for A
irfs4127pbf irfsl4127pbf.pdf
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PD - 96177IRFS4127PbFIRFSL4127PbFHEXFET Power MOSFETApplicationsDVDSS200Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.18.6ml High Speed Power SwitchingG max. 22ml Hard Switched and High Frequency CircuitsID 72ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessDDl Fully Characterized Capa
irfs4115pbf irfsl4115pbf.pdf
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PD - 96198AIRFS4115PbFIRFSL4115PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS150Vl Uninterruptible Power SupplyRDS(on) typ.10.3ml High Speed Power Switching max. 12.1ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 99A BenefitsID (Package Limited)195A Sl Improved Gate, Avalanche and Dynamic
irfs4127pbf irfsl4127pbf.pdf
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PD - 96177IRFS4127PbFIRFSL4127PbFHEXFET Power MOSFETApplicationsDVDSS200Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.18.6ml High Speed Power SwitchingG max. 22ml Hard Switched and High Frequency CircuitsID 72ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessDDl Fully Characterized Capa
auirfs4115 auirfsl4115.pdf
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AUIRFS4115 AUTOMOTIVE GRADE AUIRFSL4115 HEXFET Power MOSFET VDSS 150V Features Advanced Process Technology RDS(on) typ. 10.3m Ultra Low On-Resistance max. 12.1m 175C Operating Temperature Fast Switching ID 99A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S
irfsl4115.pdf
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFSL4115FEATURESWith TO-262 packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
irfsl4127.pdf
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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFSL4127FEATURESWith To-262(I2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
![IRFSL41N15D](https://alltransistors.com/images/us.png)
![IRFSL41N15D](https://alltransistors.com/images/es.png)
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